Thermo-Optic Characterization of Silicon Nitride Resonators for Cryogenic Photonic Circuits

Ali W. Elshaari*, Iman Esmaeil Zadeh, Klaus D. Jöns, Val Zwiller

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

78 Citations (Scopus)
184 Downloads (Pure)


In this paper, we characterize the Thermo-optic properties of silicon nitride ring resonators between 18 and 300 K. The Thermo-optic coefficients of the silicon nitride core and the oxide cladding are measured by studying the temperature dependence of the resonance wavelengths. The resonant modes show low temperature dependence at cryogenic temperatures and higher dependence as the temperature increases. We find the Thermo-optic coefficients of PECVD silicon nitride and silicon oxide to be 2.51 ± 0.08 E- 5 K-1 and 0.96 ± 0.09 E-5 K-1 at room temperature while decreasing by an order of magnitude when cooling to 18 K. To show the effect of variations in the thermo-optic coefficients on device performance, we study the tuning of a fully integrated electrically tunable filter as a function of voltage for different temperatures. The presented results provide new practical guidelines in designing photonic circuits for studying low-temperature optical phenomena.

Original languageEnglish
Article number7463458
JournalIEEE Photonics Journal
Issue number3
Publication statusPublished - 1 Jun 2016


  • Integrated optics
  • Optical properties
  • Ring resonator


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