Thickness dependent interlayer transport in vertical MoS2 Josephson junctions

Joshua O. Island, Gary A. Steele, Herre S J Van Der Zant, Andres Castellanos-Gomez

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12 Citations (Scopus)
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Abstract

Wereport on observations of thickness dependent Josephson coupling and multiple Andreev reflections (MAR) in vertically stacked molybdenum disulfide (MoS2)-molybdenum rhenium (MoRe) Josephson junctions. MoRe, a chemically inert superconductor, allows for oxide free fabrication of high transparency vertical MoS2 devices. Single and bilayer MoS2 junctions display relatively large critical currents (up to 2.5 μA) and the appearance of sub-gap structure given by MAR. In three and four layer thick devices we observe orders of magnitude lower critical currents (sub-nA) and reduced quasiparticle gaps due to proximitized MoS2 layers in contact with MoRe.Weanticipate that this device architecture could be easily extended to other 2D materials.

Original languageEnglish
Article number031002
Pages (from-to)1-7
Number of pages7
Journal2D Materials
Volume3
Issue number3
DOIs
Publication statusPublished - 1 Jul 2016

Bibliographical note

Accepted Author Manuscript

Keywords

  • Andreev reflection
  • Josephson junction
  • Molybdenum disulfide
  • MoS
  • Thickness dependence
  • Tunnel barrier
  • Vertical junction

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