Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity

Xuanwu Kang, Yingkui Zheng, Hao Wu, Ke Wei, Yue Sun, Guoqi Zhang, Xinyu Liu

Research output: Contribution to journalArticleScientificpeer-review

Abstract

In this study, novel AlGaN/GaN Schottky barrier diodes (SBDs) are fabricated with thin-barrier (5 nm) AlGaN/GaN heterostructures, featuring recess-free technology, eliminating bombardment plasma damage, and leading to high device uniformity. Combining a gated-edge termination (GET) design and assistance with high-quality low-pressure chemical vapor deposition SiN x, a low reverse leakage current (∼10 nA mm-1@-600 V) and a high reverse breakdown voltage of over 1.78 kV (@1 μA mm-1) are obtained. At the same time, we achieve a low turn-on voltage of 0.57 V and a low differential on-state resistance R on,sp of 1.49 mΩ cm2 for thin-barrier GET SBDs with an anode-to-cathode distance (L AC) of 15 μm, yielding a Baliga's figure of merit of 2120 MW cm-2. Moreover, this proposed diode process flow is compatible with AlGaN/GaN high-electron-mobility transistors, which is promising for its integration in the smart GaN platform.

Original languageEnglish
Article number094001
Pages (from-to)1-5
Number of pages5
JournalSemiconductor Science and Technology
Volume36
Issue number9
DOIs
Publication statusPublished - 2021

Keywords

  • AlGaN/GaN
  • gate-edge termination
  • high breakdown voltage
  • lateral
  • low turn-on voltage
  • Schottky barrier diode

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