TY - JOUR
T1 - Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity
AU - Kang, Xuanwu
AU - Zheng, Yingkui
AU - Wu, Hao
AU - Wei, Ke
AU - Sun, Yue
AU - Zhang, Guoqi
AU - Liu, Xinyu
PY - 2021
Y1 - 2021
N2 - In this study, novel AlGaN/GaN Schottky barrier diodes (SBDs) are fabricated with thin-barrier (5 nm) AlGaN/GaN heterostructures, featuring recess-free technology, eliminating bombardment plasma damage, and leading to high device uniformity. Combining a gated-edge termination (GET) design and assistance with high-quality low-pressure chemical vapor deposition SiN x, a low reverse leakage current (∼10 nA mm-1@-600 V) and a high reverse breakdown voltage of over 1.78 kV (@1 μA mm-1) are obtained. At the same time, we achieve a low turn-on voltage of 0.57 V and a low differential on-state resistance R on,sp of 1.49 mΩ cm2 for thin-barrier GET SBDs with an anode-to-cathode distance (L AC) of 15 μm, yielding a Baliga's figure of merit of 2120 MW cm-2. Moreover, this proposed diode process flow is compatible with AlGaN/GaN high-electron-mobility transistors, which is promising for its integration in the smart GaN platform.
AB - In this study, novel AlGaN/GaN Schottky barrier diodes (SBDs) are fabricated with thin-barrier (5 nm) AlGaN/GaN heterostructures, featuring recess-free technology, eliminating bombardment plasma damage, and leading to high device uniformity. Combining a gated-edge termination (GET) design and assistance with high-quality low-pressure chemical vapor deposition SiN x, a low reverse leakage current (∼10 nA mm-1@-600 V) and a high reverse breakdown voltage of over 1.78 kV (@1 μA mm-1) are obtained. At the same time, we achieve a low turn-on voltage of 0.57 V and a low differential on-state resistance R on,sp of 1.49 mΩ cm2 for thin-barrier GET SBDs with an anode-to-cathode distance (L AC) of 15 μm, yielding a Baliga's figure of merit of 2120 MW cm-2. Moreover, this proposed diode process flow is compatible with AlGaN/GaN high-electron-mobility transistors, which is promising for its integration in the smart GaN platform.
KW - AlGaN/GaN
KW - gate-edge termination
KW - high breakdown voltage
KW - lateral
KW - low turn-on voltage
KW - Schottky barrier diode
UR - http://www.scopus.com/inward/record.url?scp=85113411381&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/ac0b93
DO - 10.1088/1361-6641/ac0b93
M3 - Article
AN - SCOPUS:85113411381
SN - 0268-1242
VL - 36
SP - 1
EP - 5
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 9
M1 - 094001
ER -