Abstract
Mixed-phase hydrogenated silicon oxide (SiOx:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped and n-doped layers. The bandgap of p-SiOx:H is adjusted to achieve a highly-transparent window layer while also providing a strong electric field. Bandgap grading of n-SiOx:H is designed to obtain a smooth transition of the energy band edge from the intrinsic to n-doped layer, without the need of an amorphous buffer layer. With the optimized optical and electrical structure, a high conversion efficiency of 9.41% has been achieved. Having eliminated other doped materials without sacrificing performance, the sole use of SiOx:H in the doped layers of a-SiGe:H cells opens up great flexibility in the design of high-efficiency multi-junction thin-film silicon-based solar cells.
Original language | English |
---|---|
Pages (from-to) | 9-14 |
Number of pages | 6 |
Journal | Solar Energy Materials & Solar Cells |
Volume | 163 |
DOIs | |
Publication status | Published - 2017 |
Keywords
- Hydrogenated amorphous silicon germanium
- Hydrogenated silicon oxide
- Light management
- Parasitic losses