Thin film silicon devices deposited at 100 degrees C: A study on the structural order of the photoactive layer

JK Rath, REI Schropp, PRI Caborocas, FD Tichelaar

    Research output: Contribution to journalArticleScientificpeer-review

    8 Citations (Scopus)
    Original languageUndefined/Unknown
    Pages (from-to)2652-2656
    Number of pages5
    JournalJournal of Non-Crystalline Solids
    Issue number19-25
    Publication statusPublished - 2008


    • academic journal papers
    • CWTS 0.75 <= JFIS < 2.00

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