Thin film silicon devices deposited at 100 degrees C: A study on the structural order of the photoactive layer

JK Rath, REI Schropp, PRI Caborocas, FD Tichelaar

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	2652-2656
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	354
Issue number	19-25
Publication status	Published - 2008

Keywords

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title = "Thin film silicon devices deposited at 100 degrees C: A study on the structural order of the photoactive layer",

keywords = "academic journal papers, CWTS 0.75 <= JFIS < 2.00",

author = "JK Rath and REI Schropp and PRI Caborocas and FD Tichelaar",

year = "2008",

language = "Undefined/Unknown",

volume = "354",

pages = "2652--2656",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

number = "19-25",

}

TY - JOUR

T1 - Thin film silicon devices deposited at 100 degrees C: A study on the structural order of the photoactive layer

AU - Rath, JK

AU - Schropp, REI

AU - Caborocas, PRI

AU - Tichelaar, FD

PY - 2008

Y1 - 2008

KW - academic journal papers

KW - CWTS 0.75 <= JFIS < 2.00

M3 - Article

SN - 0022-3093

VL - 354

SP - 2652

EP - 2656

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 19-25

ER -