Three-phase active front-end rectifier efficiency improvement with silicon carbide power semiconductor devices

Saijun Mao, Tao Wu, Xi Lu, Jelena Popovic, Bram Ferreira

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

5 Citations (Scopus)

Abstract

This paper investigates SiC power semiconductor devices in a three-phase active front-end Boost PWM rectifier for power conversion efficiency improvement. Different from Si IGBT based Boost PFC rectifier, the SiC MOSFET based Boost PFC rectifier can achieve the synchronous rectification by MOSFET channel reverse conduction for efficiency improvement. The operation principle difference of three-phase active frontend Boost PWM rectifier with SiC MOSFET and Si IGBT is introduced. The switching characterizations of 1.2kV SiC MOSFET are provided. 5kW 380VAC input, 800VDC output three-phase active front-end Boost PWM rectifier prototype is built in lab to evaluate the efficiency advantage with SiC device. All SiC power semiconductor devices based circuit achieves about 1.2% more efficient compared with all Si devices, and around 0.5% more efficient than Si IGBT & SiC diode hybrid device pair for the three-phase Boost PWM rectifier due to low switching loss of 1.2kV SiC MOSFET and reduced conduction loss from the synchronous rectification operation for 1.2kV SiC MOSFET.
Original languageEnglish
Title of host publicationIEEE Energy Conversion Congress and Exposition, IEEE ECCE 2016
Subtitle of host publicationProceedings
EditorsIan Brown
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages1-8
Number of pages8
ISBN (Electronic)978-1-5090-0737-0
DOIs
Publication statusPublished - 22 Sep 2016
EventIEEE ECCE 2016: IEEE Energy Conversion Congress and Exposition - Milwaukee, WI, United States
Duration: 18 Sep 201622 Sep 2016

Conference

ConferenceIEEE ECCE 2016
Abbreviated titleECCE
CountryUnited States
CityMilwaukee, WI
Period18/09/1622/09/16

Keywords

  • synchronous rectification
  • wide band-gap
  • power semiconductor devices
  • Gallium Nitrid
  • Silicon Carbide
  • Three-phase
  • active rectifier
  • pulse width modulation (PWM)
  • power factor correction

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