Threshold concentration for ion implantation-induced Co nanocluster formation in TiO2:Co thin films

O.  Yildirim; S. Cornelius; A. Smekhova; M. Butterling; W. Anwand; A. Wagner; C. Bähtz; R. Böttger; K. Potzger

doi:10.1016/j.nimb.2016.11.009

Threshold concentration for ion implantation-induced Co nanocluster formation in TiO₂:Co thin films

O. Yildirim, S. Cornelius, A. Smekhova, M. Butterling, W. Anwand, A. Wagner, C. Bähtz, R. Böttger, K. Potzger

ChemE/Materials for Energy Conversion and Storage

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

Structural, defect and magnetic properties of the TiO₂:Co films are investigated. We varied the maximum Co⁺-implantation concentration from 0.5 at.% up to 5 at.%. A concentration window, which is considered as a threshold for the formation of metallic secondary phases is found. At this concentration it is also observed that the majority of the dopant atoms are incorporated into the host lattice.

Original language	English
Pages (from-to)	13-16
Number of pages	4
Journal	Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume	389-390
DOIs	https://doi.org/10.1016/j.nimb.2016.11.009
Publication status	Published - 15 Dec 2016

Keywords

Dilute magnetic oxide
Ion implantation
Nanoclusters

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10.1016/j.nimb.2016.11.009

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Yildirim, O., Cornelius, S., Smekhova, A., Butterling, M., Anwand, W., Wagner, A., Bähtz, C., Böttger, R., & Potzger, K. (2016). Threshold concentration for ion implantation-induced Co nanocluster formation in TiO₂:Co thin films. Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 389-390, 13-16. https://doi.org/10.1016/j.nimb.2016.11.009

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abstract = "Structural, defect and magnetic properties of the TiO2:Co films are investigated. We varied the maximum Co+-implantation concentration from 0.5 at.% up to 5 at.%. A concentration window, which is considered as a threshold for the formation of metallic secondary phases is found. At this concentration it is also observed that the majority of the dopant atoms are incorporated into the host lattice.",

keywords = "Dilute magnetic oxide, Ion implantation, Nanoclusters",

author = "O. Yildirim and S. Cornelius and A. Smekhova and M. Butterling and W. Anwand and A. Wagner and C. B{\"a}htz and R. B{\"o}ttger and K. Potzger",

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doi = "10.1016/j.nimb.2016.11.009",

language = "English",

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Yildirim, O, Cornelius, S, Smekhova, A, Butterling, M, Anwand, W, Wagner, A, Bähtz, C, Böttger, R & Potzger, K 2016, 'Threshold concentration for ion implantation-induced Co nanocluster formation in TiO₂:Co thin films', Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, vol. 389-390, pp. 13-16. https://doi.org/10.1016/j.nimb.2016.11.009

Threshold concentration for ion implantation-induced Co nanocluster formation in TiO₂:Co thin films. / Yildirim, O. ; Cornelius, S.; Smekhova, A. et al.
In: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol. 389-390, 15.12.2016, p. 13-16.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Threshold concentration for ion implantation-induced Co nanocluster formation in TiO2:Co thin films

AU - Yildirim, O.

AU - Cornelius, S.

AU - Smekhova, A.

AU - Butterling, M.

AU - Anwand, W.

AU - Wagner, A.

AU - Bähtz, C.

AU - Böttger, R.

AU - Potzger, K.

PY - 2016/12/15

Y1 - 2016/12/15

N2 - Structural, defect and magnetic properties of the TiO2:Co films are investigated. We varied the maximum Co+-implantation concentration from 0.5 at.% up to 5 at.%. A concentration window, which is considered as a threshold for the formation of metallic secondary phases is found. At this concentration it is also observed that the majority of the dopant atoms are incorporated into the host lattice.

AB - Structural, defect and magnetic properties of the TiO2:Co films are investigated. We varied the maximum Co+-implantation concentration from 0.5 at.% up to 5 at.%. A concentration window, which is considered as a threshold for the formation of metallic secondary phases is found. At this concentration it is also observed that the majority of the dopant atoms are incorporated into the host lattice.

KW - Dilute magnetic oxide

KW - Ion implantation

KW - Nanoclusters

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U2 - 10.1016/j.nimb.2016.11.009

DO - 10.1016/j.nimb.2016.11.009

M3 - Article

AN - SCOPUS:84998813230

SN - 0168-583X

VL - 389-390

SP - 13

EP - 16

JO - Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

ER -

Threshold concentration for ion implantation-induced Co nanocluster formation in TiO₂:Co thin films

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Keywords

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