Threshold concentration for ion implantation-induced Co nanocluster formation in TiO2:Co thin films

O. Yildirim, S. Cornelius, A. Smekhova, M. Butterling, W. Anwand, A. Wagner, C. Bähtz, R. Böttger, K. Potzger

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

Structural, defect and magnetic properties of the TiO2:Co films are investigated. We varied the maximum Co+-implantation concentration from 0.5 at.% up to 5 at.%. A concentration window, which is considered as a threshold for the formation of metallic secondary phases is found. At this concentration it is also observed that the majority of the dopant atoms are incorporated into the host lattice.

Original languageEnglish
Pages (from-to)13-16
Number of pages4
JournalNuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume389-390
DOIs
Publication statusPublished - 15 Dec 2016

Keywords

  • Dilute magnetic oxide
  • Ion implantation
  • Nanoclusters

Fingerprint

Dive into the research topics of 'Threshold concentration for ion implantation-induced Co nanocluster formation in TiO<sub>2</sub>:Co thin films'. Together they form a unique fingerprint.

Cite this