Through-membrane electron-beam lithography for ultrathin membrane applications

M. Neklyudova; A. K. Erdamar; L. Vicarelli; S. J. Heerema; T. Rehfeldt; G. Pandraud; Z. Koladouz Esfahani; C. Dekker; H. W. Zandbergen

doi:10.1063/1.4986991

Through-membrane electron-beam lithography for ultrathin membrane applications

M. Neklyudova, A. K. Erdamar, L. Vicarelli, S. J. Heerema, T. Rehfeldt, G. Pandraud, Z. Koladouz Esfahani, C. Dekker, H. W. Zandbergen

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Abstract

We present a technique to fabricate ultrathin (down to 20 nm) uniform electron transparent windows at dedicated locations in a SiN membrane for in situ transmission electron microscopy experiments. An electron-beam (e-beam) resist is spray-coated on the backside of the membrane in a KOH-etched cavity in silicon which is patterned using through-membrane electron-beam lithography. This is a controlled way to make transparent windows in membranes, whilst the topside of the membrane remains undamaged and retains its flatness. Our approach was optimized for MEMS-based heating chips but can be applied to any chip design. We show two different applications of this technique for (1) fabrication of a nanogap electrode by means of electromigration in thin free-standing metal films and (2) making low-noise graphene nanopore devices.

Original language	English
Article number	063105
Pages (from-to)	1-5
Number of pages	5
Journal	Applied Physics Letters
Volume	111
Issue number	6
DOIs	https://doi.org/10.1063/1.4986991
Publication status	Published - 7 Aug 2017

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title = "Through-membrane electron-beam lithography for ultrathin membrane applications",

abstract = "We present a technique to fabricate ultrathin (down to 20 nm) uniform electron transparent windows at dedicated locations in a SiN membrane for in situ transmission electron microscopy experiments. An electron-beam (e-beam) resist is spray-coated on the backside of the membrane in a KOH-etched cavity in silicon which is patterned using through-membrane electron-beam lithography. This is a controlled way to make transparent windows in membranes, whilst the topside of the membrane remains undamaged and retains its flatness. Our approach was optimized for MEMS-based heating chips but can be applied to any chip design. We show two different applications of this technique for (1) fabrication of a nanogap electrode by means of electromigration in thin free-standing metal films and (2) making low-noise graphene nanopore devices.",

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AU - Neklyudova, M.

AU - Erdamar, A. K.

AU - Vicarelli, L.

AU - Heerema, S. J.

AU - Rehfeldt, T.

AU - Pandraud, G.

AU - Koladouz Esfahani, Z.

AU - Dekker, C.

AU - Zandbergen, H. W.

PY - 2017/8/7

Y1 - 2017/8/7

N2 - We present a technique to fabricate ultrathin (down to 20 nm) uniform electron transparent windows at dedicated locations in a SiN membrane for in situ transmission electron microscopy experiments. An electron-beam (e-beam) resist is spray-coated on the backside of the membrane in a KOH-etched cavity in silicon which is patterned using through-membrane electron-beam lithography. This is a controlled way to make transparent windows in membranes, whilst the topside of the membrane remains undamaged and retains its flatness. Our approach was optimized for MEMS-based heating chips but can be applied to any chip design. We show two different applications of this technique for (1) fabrication of a nanogap electrode by means of electromigration in thin free-standing metal films and (2) making low-noise graphene nanopore devices.

AB - We present a technique to fabricate ultrathin (down to 20 nm) uniform electron transparent windows at dedicated locations in a SiN membrane for in situ transmission electron microscopy experiments. An electron-beam (e-beam) resist is spray-coated on the backside of the membrane in a KOH-etched cavity in silicon which is patterned using through-membrane electron-beam lithography. This is a controlled way to make transparent windows in membranes, whilst the topside of the membrane remains undamaged and retains its flatness. Our approach was optimized for MEMS-based heating chips but can be applied to any chip design. We show two different applications of this technique for (1) fabrication of a nanogap electrode by means of electromigration in thin free-standing metal films and (2) making low-noise graphene nanopore devices.

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Through-membrane electron-beam lithography for ultrathin membrane applications

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