Time-Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS Technology

Yaqian Zhang; Jiarui Mo; Sten Vollebregt; Guoqi Zhang; Alexander  May; Tobias  Erlbacher

doi:10.1109/ICEPT59018.2023.10492218

Time-Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS Technology

Yaqian Zhang, Jiarui Mo, Sten Vollebregt, Guoqi Zhang, Alexander May, Tobias Erlbacher

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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Abstract

The 4H-silicon carbide (SiC) exhibits excellent material characteristics, particularly in high-temperature, high-power, high-frequency applications. However, the reliability of SiC-based devices operating in harsh environments is a critical concern. While time-dependent dielectric breakdown (TDDB) in conventional SiC devices has been extensively studied, its behavior in SiC MOSFETs within CMOS technology remains largely unexplored. In this work, we analyzed the effect of temperature and device size on TDDD failure time while employing failure analysis to identify two distinct failure structures. The finding of this research enhances the understanding of TDDB failure mechanisms and provides valuable insights for improving device reliability.

Original language	English
Title of host publication	Proceedings of the 2023 24th International Conference on Electronic Packaging Technology (ICEPT)
Publisher	IEEE
Number of pages	4
ISBN (Electronic)	979-8-3503-3881-2
ISBN (Print)	979-8-3503-3882-9
DOIs	https://doi.org/10.1109/ICEPT59018.2023.10492218
Publication status	Published - 2023
Event	2023 24th International Conference on Electronic Packaging Technology (ICEPT) - Shihezi City, China Duration: 8 Aug 2023 → 11 Aug 2023

Publication series

Name	2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023

Conference

Conference	2023 24th International Conference on Electronic Packaging Technology (ICEPT)
Country/Territory	China
City	Shihezi City
Period	8/08/23 → 11/08/23

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

4H-SiC
Reliability
Time-dependent dielectric breakdown

Access to Document

10.1109/ICEPT59018.2023.10492218

Time-Dependent_Dielectric_Breakdown_of_4H-SiC_MOSFETs_in_CMOS_TechnologyFinal published version, 1.86 MB

Cite this

Zhang, Y., Mo, J., Vollebregt, S., Zhang, G., May, A., & Erlbacher , T. (2023). Time-Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS Technology. In Proceedings of the 2023 24th International Conference on Electronic Packaging Technology (ICEPT) (2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023). IEEE. https://doi.org/10.1109/ICEPT59018.2023.10492218

@inproceedings{27ecee4a48584bc493d6e97a38eba5fe,

title = "Time-Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS Technology",

abstract = "The 4H-silicon carbide (SiC) exhibits excellent material characteristics, particularly in high-temperature, high-power, high-frequency applications. However, the reliability of SiC-based devices operating in harsh environments is a critical concern. While time-dependent dielectric breakdown (TDDB) in conventional SiC devices has been extensively studied, its behavior in SiC MOSFETs within CMOS technology remains largely unexplored. In this work, we analyzed the effect of temperature and device size on TDDD failure time while employing failure analysis to identify two distinct failure structures. The finding of this research enhances the understanding of TDDB failure mechanisms and provides valuable insights for improving device reliability.",

keywords = "4H-SiC, Reliability, Time-dependent dielectric breakdown",

author = "Yaqian Zhang and Jiarui Mo and Sten Vollebregt and Guoqi Zhang and Alexander May and Tobias Erlbacher",

note = "Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.; 2023 24th International Conference on Electronic Packaging Technology (ICEPT) ; Conference date: 08-08-2023 Through 11-08-2023",

year = "2023",

doi = "10.1109/ICEPT59018.2023.10492218",

language = "English",

isbn = "979-8-3503-3882-9",

series = "2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023",

publisher = "IEEE",

booktitle = "Proceedings of the 2023 24th International Conference on Electronic Packaging Technology (ICEPT)",

address = "United States",

}

Zhang, Y , Mo, J , Vollebregt, S , Zhang, G, May, A & Erlbacher , T 2023, Time-Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS Technology. in Proceedings of the 2023 24th International Conference on Electronic Packaging Technology (ICEPT). 2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023, IEEE, 2023 24th International Conference on Electronic Packaging Technology (ICEPT), Shihezi City, China, 8/08/23. https://doi.org/10.1109/ICEPT59018.2023.10492218

Time-Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS Technology. / Zhang, Yaqian ; Mo, Jiarui ; Vollebregt, Sten et al.
Proceedings of the 2023 24th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2023. (2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Time-Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS Technology

AU - Zhang, Yaqian

AU - Mo, Jiarui

AU - Vollebregt, Sten

AU - Zhang, Guoqi

AU - May, Alexander

AU - Erlbacher , Tobias

N1 - Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

PY - 2023

Y1 - 2023

N2 - The 4H-silicon carbide (SiC) exhibits excellent material characteristics, particularly in high-temperature, high-power, high-frequency applications. However, the reliability of SiC-based devices operating in harsh environments is a critical concern. While time-dependent dielectric breakdown (TDDB) in conventional SiC devices has been extensively studied, its behavior in SiC MOSFETs within CMOS technology remains largely unexplored. In this work, we analyzed the effect of temperature and device size on TDDD failure time while employing failure analysis to identify two distinct failure structures. The finding of this research enhances the understanding of TDDB failure mechanisms and provides valuable insights for improving device reliability.

AB - The 4H-silicon carbide (SiC) exhibits excellent material characteristics, particularly in high-temperature, high-power, high-frequency applications. However, the reliability of SiC-based devices operating in harsh environments is a critical concern. While time-dependent dielectric breakdown (TDDB) in conventional SiC devices has been extensively studied, its behavior in SiC MOSFETs within CMOS technology remains largely unexplored. In this work, we analyzed the effect of temperature and device size on TDDD failure time while employing failure analysis to identify two distinct failure structures. The finding of this research enhances the understanding of TDDB failure mechanisms and provides valuable insights for improving device reliability.

KW - 4H-SiC

KW - Reliability

KW - Time-dependent dielectric breakdown

UR - http://www.scopus.com/inward/record.url?scp=85191722584&partnerID=8YFLogxK

U2 - 10.1109/ICEPT59018.2023.10492218

DO - 10.1109/ICEPT59018.2023.10492218

M3 - Conference contribution

SN - 979-8-3503-3882-9

T3 - 2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023

BT - Proceedings of the 2023 24th International Conference on Electronic Packaging Technology (ICEPT)

PB - IEEE

T2 - 2023 24th International Conference on Electronic Packaging Technology (ICEPT)

Y2 - 8 August 2023 through 11 August 2023

ER -

Time-Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS Technology

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Keywords

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