Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties

JO Island; R Biele; M Barawi; JM Clamagirand; JR Ares; Carlos Sánchez; HSJ van der Zant; IJ Ferrer; R D'Agosta; A Castellanos Gomez

doi:10.1038/srep22214

Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties

JO Island^*, R Biele, M Barawi, JM Clamagirand, JR Ares, Carlos Sánchez, HSJ van der Zant, IJ Ferrer, R D'Agosta^*, A Castellanos Gomez^*

^*Corresponding author for this work

QN/van der Zant Lab

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Abstract

We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS3 flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS3 in the random-phase-approximation (RPA) and find that the calculations are in qualitative agreement with the observed experimental optical transmittance.

Original language	English
Article number	22214
Number of pages	7
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep22214
Publication status	Published - 2016

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title = "Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties",

abstract = "We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS3 flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS3 in the random-phase-approximation (RPA) and find that the calculations are in qualitative agreement with the observed experimental optical transmittance.",

author = "JO Island and R Biele and M Barawi and JM Clamagirand and JR Ares and Carlos S{\'a}nchez and {van der Zant}, HSJ and IJ Ferrer and R D'Agosta and {Castellanos Gomez}, A",

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doi = "10.1038/srep22214",

language = "English",

volume = "6",

journal = "Scientific Reports",

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TY - JOUR

T1 - Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties

AU - Island, JO

AU - Biele, R

AU - Barawi, M

AU - Clamagirand, JM

AU - Ares, JR

AU - Sánchez, Carlos

AU - van der Zant, HSJ

AU - Ferrer, IJ

AU - D'Agosta, R

AU - Castellanos Gomez, A

PY - 2016

Y1 - 2016

N2 - We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS3 flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS3 in the random-phase-approximation (RPA) and find that the calculations are in qualitative agreement with the observed experimental optical transmittance.

AB - We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS3 flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS3 in the random-phase-approximation (RPA) and find that the calculations are in qualitative agreement with the observed experimental optical transmittance.

UR - http://resolver.tudelft.nl/uuid:26defe60-67fe-4edd-a85d-6c78db35a2a0

U2 - 10.1038/srep22214

DO - 10.1038/srep22214

M3 - Article

SN - 2045-2322

VL - 6

JO - Scientific Reports

JF - Scientific Reports

M1 - 22214

ER -

Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties

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