Towards a realistic GaAs-spin qubit device for a classical error-corrected quantum memory

Based on numerically optimized real-device gates and parameters we study the performance of the phase-flip (repetition) code on a linear array of gallium arsenide (GaAs) quantum dots hosting singlet-triplet qubits. We first examine the expected performance of the code using simple error models of circuit-level and phenomenological noise, reporting, for example, a circuit-level depolarizing noise threshold of approximately 3%. We then perform density-matrix simulations using a maximum-likelihood and minimum-weight matching decoder to study the effect of real-device dephasing, readout error, and quasistatic as well as fast gate noise. Considering the tradeoff between qubit readout error and dephasing time (T2) over measurement time, we identify a subthreshold region for the phase-flip code which lies within experimental reach.