Towards information storage by designing both electron and hole detrapping processes in bismuth and lanthanide-doped LiRE(Si,Ge)O4 (RE = Y, Lu) with high charge carrier storage capacity

Tianshuai Lyu*, Pieter Dorenbos

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

39 Citations (Scopus)
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