TY - JOUR
T1 - Transport spectroscopy of induced superconductivity in the three-dimensional topological insulator HgTe
AU - Wiedenmann, Jonas
AU - Liebhaber, Eva
AU - Kübert, Johannes
AU - Bocquillon, Erwann
AU - Burset, Pablo
AU - Ames, Christopher
AU - Buhmann, Hartmut
AU - Klapwijk, Teun M.
AU - Molenkamp, Laurens W.
PY - 2017
Y1 - 2017
N2 - The proximity-induced superconducting state in the three-dimensional topological insulator HgTe has been studied using electronic transport of a normal metal-superconducting point contact as a spectroscopic tool (Andreev point-contact spectroscopy). By analyzing the conductance as a function of voltage for various temperatures, magnetic fields, and gate voltages, we find evidence, in equilibrium, for an induced order parameter in HgTe of 70 μeV and a niobium order parameter of 1.1 meV. To understand the full conductance curve as a function of applied voltage we suggest a non-equilibrium-driven transformation of the quantum transport process where the relevant scattering region and equilibrium reservoirs change with voltage. This change implies that the spectroscopy probes the superconducting correlations at different positions in the sample, depending on the bias voltage.
AB - The proximity-induced superconducting state in the three-dimensional topological insulator HgTe has been studied using electronic transport of a normal metal-superconducting point contact as a spectroscopic tool (Andreev point-contact spectroscopy). By analyzing the conductance as a function of voltage for various temperatures, magnetic fields, and gate voltages, we find evidence, in equilibrium, for an induced order parameter in HgTe of 70 μeV and a niobium order parameter of 1.1 meV. To understand the full conductance curve as a function of applied voltage we suggest a non-equilibrium-driven transformation of the quantum transport process where the relevant scattering region and equilibrium reservoirs change with voltage. This change implies that the spectroscopy probes the superconducting correlations at different positions in the sample, depending on the bias voltage.
UR - http://resolver.tudelft.nl/uuid:1cdbc155-8c39-475e-97a1-fdfb46d85167
UR - http://www.scopus.com/inward/record.url?scp=85038098194&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.96.165302
DO - 10.1103/PhysRevB.96.165302
M3 - Article
AN - SCOPUS:85038098194
SN - 1098-0121
VL - 96
JO - Physical Review B (Condensed Matter and Materials Physics)
JF - Physical Review B (Condensed Matter and Materials Physics)
IS - 16
M1 - 165302
ER -