INIS
transistors
100%
nitrogen dioxide
100%
p-n junctions
100%
gallium
100%
indium
100%
transport
100%
zinc oxides
100%
chemical vapor deposition
100%
sensors
100%
gases
100%
devices
50%
values
25%
heterojunctions
25%
sensitivity
12%
air
12%
two-dimensional systems
12%
applications
12%
range
12%
films
12%
transition metals
12%
comparative evaluations
12%
tungsten sulfides
12%
thin films
12%
detection
12%
concentration
12%
engineering
12%
Material Science
Zinc Oxide
100%
Chemical Vapor Deposition
100%
Indium
100%
Gallium
100%
Nitrogen Dioxide
100%
Heterojunction
100%
Gas
100%
Transistor
87%
Devices
50%
Materials
12%
Air
12%
Transition Metal Dichalcogenide
12%
Two-Dimensional Material
12%
Thin-Film Transistor
12%
Diode
12%
Tungsten
12%
Oxide Film
12%
Chemical Engineering
Chemical Vapor Deposition
100%
Zinc Oxide
100%
Indium
100%
Gallium
100%
Vapor Deposition
33%
Transition Metal
33%
Tungsten
33%
Keyphrases
Tunable Polarity
100%
Gas Sensing Response
33%
NO2 Gas
16%
Gate Bias
16%
Ambipolar Behavior
16%
Gas Sensor Response
16%
Heterojunction Device
16%