TY - JOUR
T1 - Ultra-Stretchable Interconnects for High-Density Stretchable Electronics
AU - Shafqat, Salman
AU - Hoefnagels, Johan P.M.
AU - Savov, Angel
AU - Joshi, Shivani
AU - Dekker, Ronald
AU - Geers, Marc G.D.
PY - 2017
Y1 - 2017
N2 - The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for proven standardized (complementary metal-oxide semiconductor (CMOS)-type) process recipes using bulk integrated circuit (IC) microfabrication tools and fine-pitch photolithography patterning. Here, we address this combined challenge of microfabrication with extreme stretchability for high-density SE devices by introducing CMOS-enabled, free-standing, miniaturized interconnect structures that fully exploit their 3D kinematic freedom through an interplay of buckling, torsion, and bending to maximize stretchability. Integration with standard CMOS-type batch processing is assured by utilizing the Flex-to-Rigid (F2R) post-processing technology to make the back-end-of-line interconnect structures free-standing, thus enabling the routine microfabrication of highly-stretchable interconnects. The performance and reproducibility of these free-standing structures is promising: an elastic stretch beyond 2000% and ultimate (plastic) stretch beyond 3000%, with <0.3% resistance change, and >10 million cycles at 1000% stretch with <1% resistance change. This generic technology provides a new route to exciting highly-stretchable miniature devices.
AB - The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for proven standardized (complementary metal-oxide semiconductor (CMOS)-type) process recipes using bulk integrated circuit (IC) microfabrication tools and fine-pitch photolithography patterning. Here, we address this combined challenge of microfabrication with extreme stretchability for high-density SE devices by introducing CMOS-enabled, free-standing, miniaturized interconnect structures that fully exploit their 3D kinematic freedom through an interplay of buckling, torsion, and bending to maximize stretchability. Integration with standard CMOS-type batch processing is assured by utilizing the Flex-to-Rigid (F2R) post-processing technology to make the back-end-of-line interconnect structures free-standing, thus enabling the routine microfabrication of highly-stretchable interconnects. The performance and reproducibility of these free-standing structures is promising: an elastic stretch beyond 2000% and ultimate (plastic) stretch beyond 3000%, with <0.3% resistance change, and >10 million cycles at 1000% stretch with <1% resistance change. This generic technology provides a new route to exciting highly-stretchable miniature devices.
KW - Complementary metal-oxide semiconductor (CMOS) processing
KW - Mechanical size-effects
KW - Miniaturized interconnects
KW - Stretchable electronics
KW - Ultra-stretchability
UR - http://www.scopus.com/inward/record.url?scp=85029768969&partnerID=8YFLogxK
UR - http://resolver.tudelft.nl/uuid:3767b56d-2610-4e6c-b157-d2bdb2d811a5
U2 - 10.3390/mi8090277
DO - 10.3390/mi8090277
M3 - Article
AN - SCOPUS:85029768969
VL - 8
JO - Micromachines
JF - Micromachines
SN - 2072-666X
IS - 9
M1 - 277
ER -