Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration

C. Porret; A. Hikavyy; J. F. Gomez Granados; S. Baudot; A. Vohra; B. Kunert; B. Douhard; J. Bogdanowicz; A. Sammak; G. Scappucci; E. Rosseel; null More Authors

doi:10.1149/08607.0163ecst

Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration

C. Porret, A. Hikavyy, J. F. Gomez Granados, S. Baudot, A. Vohra, B. Kunert, B. Douhard, J. Bogdanowicz, A. Sammak, G. Scappucci, E. Rosseel, More Authors

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

11 Citations (Scopus)

Abstract

As CMOS scaling proceeds with sub-10 nm nodes, new architectures and materials are implemented to continue increasing performances at constant footprint. Strained and stacked channels and 3D-integrated devices have for instance been introduced for this purpose. A common requirement for these new technologies is a strict limitation in thermal budgets to preserve the integrity of devices already present on the chips. We present our latest developments on low-temperature epitaxial growth processes, ranging from channel to source/drain applications for a variety of devices and describe options to address the upcoming challenges.

Original language	English
Title of host publication	ECS Transactions
Editors	J.-M. Hartmann, A. Thean , A. Ogura , X. Gong , D. Harame , M. Caymax, G Niu , A. Schulze , Q. Liu , G Mashi, S. Miyazaki , A. Mai, M. Osting
Publisher	The Electrochemical Society, Inc.
Pages	163-175
Volume	86
Edition	7
ISBN (Electronic)	978-160768539-5
DOIs	https://doi.org/10.1149/08607.0163ecst
Publication status	Published - 2018
Event	8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 30 Sept 2018 → 4 Oct 2018

Conference

Conference	8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting
Country/Territory	Mexico
City	Cancun
Period	30/09/18 → 4/10/18

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10.1149/08607.0163ecst

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Porret, C., Hikavyy, A., Gomez Granados, J. F., Baudot, S., Vohra, A., Kunert, B., Douhard, B., Bogdanowicz, J., Sammak, A., Scappucci, G., Rosseel, E., & More Authors (2018). Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration. In J.-M. Hartmann, A. Thean , A. Ogura , X. Gong , D. Harame , M. Caymax, G. Niu , A. Schulze , Q. Liu , G. Mashi, S. Miyazaki , A. Mai, & M. Osting (Eds.), ECS Transactions (7 ed., Vol. 86, pp. 163-175). The Electrochemical Society, Inc.. https://doi.org/10.1149/08607.0163ecst

Porret, C. ; Hikavyy, A. ; Gomez Granados, J. F. et al. / Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration. ECS Transactions. editor / J.-M. Hartmann ; A. Thean ; A. Ogura ; X. Gong ; D. Harame ; M. Caymax ; G Niu ; A. Schulze ; Q. Liu ; G Mashi ; S. Miyazaki ; A. Mai ; M. Osting . Vol. 86 7. ed. The Electrochemical Society, Inc., 2018. pp. 163-175

@inproceedings{5c2f158cc30a4807ae0c802be15d1cfb,

title = "Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration",

abstract = "As CMOS scaling proceeds with sub-10 nm nodes, new architectures and materials are implemented to continue increasing performances at constant footprint. Strained and stacked channels and 3D-integrated devices have for instance been introduced for this purpose. A common requirement for these new technologies is a strict limitation in thermal budgets to preserve the integrity of devices already present on the chips. We present our latest developments on low-temperature epitaxial growth processes, ranging from channel to source/drain applications for a variety of devices and describe options to address the upcoming challenges.",

author = "C. Porret and A. Hikavyy and {Gomez Granados}, {J. F.} and S. Baudot and A. Vohra and B. Kunert and B. Douhard and J. Bogdanowicz and A. Sammak and G. Scappucci and E. Rosseel and {More Authors}",

year = "2018",

doi = "10.1149/08607.0163ecst",

language = "English",

volume = "86",

pages = "163--175",

editor = "Hartmann, { J.-M.} and {Thean }, A. and {Ogura }, A. and {Gong }, X. and {Harame }, D. and Caymax, { M.} and {Niu }, G and {Schulze }, A. and {Liu }, Q. and Mashi, { G} and {Miyazaki }, S. and Mai, { A.} and {Osting }, M.",

booktitle = "ECS Transactions",

publisher = "The Electrochemical Society, Inc.",

edition = "7",

note = "8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting ; Conference date: 30-09-2018 Through 04-10-2018",

}

Porret, C, Hikavyy, A, Gomez Granados, JF, Baudot, S, Vohra, A, Kunert, B, Douhard, B, Bogdanowicz, J, Sammak, A, Scappucci, G, Rosseel, E & More Authors 2018, Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration. in J-M Hartmann, A Thean , A Ogura , X Gong , D Harame , M Caymax, G Niu , A Schulze , Q Liu , G Mashi, S Miyazaki , A Mai & M Osting (eds), ECS Transactions. 7 edn, vol. 86, The Electrochemical Society, Inc., pp. 163-175, 8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting, Cancun, Mexico, 30/09/18. https://doi.org/10.1149/08607.0163ecst

Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration. / Porret, C.; Hikavyy, A.; Gomez Granados, J. F. et al.
ECS Transactions. ed. / J.-M. Hartmann; A. Thean ; A. Ogura ; X. Gong ; D. Harame ; M. Caymax; G Niu ; A. Schulze ; Q. Liu ; G Mashi; S. Miyazaki ; A. Mai; M. Osting . Vol. 86 7. ed. The Electrochemical Society, Inc., 2018. p. 163-175.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration

AU - Porret, C.

AU - Hikavyy, A.

AU - Gomez Granados, J. F.

AU - Baudot, S.

AU - Vohra, A.

AU - Kunert, B.

AU - Douhard, B.

AU - Bogdanowicz, J.

AU - Sammak, A.

AU - Scappucci, G.

AU - Rosseel, E.

AU - More Authors, null

PY - 2018

Y1 - 2018

N2 - As CMOS scaling proceeds with sub-10 nm nodes, new architectures and materials are implemented to continue increasing performances at constant footprint. Strained and stacked channels and 3D-integrated devices have for instance been introduced for this purpose. A common requirement for these new technologies is a strict limitation in thermal budgets to preserve the integrity of devices already present on the chips. We present our latest developments on low-temperature epitaxial growth processes, ranging from channel to source/drain applications for a variety of devices and describe options to address the upcoming challenges.

AB - As CMOS scaling proceeds with sub-10 nm nodes, new architectures and materials are implemented to continue increasing performances at constant footprint. Strained and stacked channels and 3D-integrated devices have for instance been introduced for this purpose. A common requirement for these new technologies is a strict limitation in thermal budgets to preserve the integrity of devices already present on the chips. We present our latest developments on low-temperature epitaxial growth processes, ranging from channel to source/drain applications for a variety of devices and describe options to address the upcoming challenges.

UR - http://www.scopus.com/inward/record.url?scp=85058436355&partnerID=8YFLogxK

U2 - 10.1149/08607.0163ecst

DO - 10.1149/08607.0163ecst

M3 - Conference contribution

AN - SCOPUS:85058436355

VL - 86

SP - 163

EP - 175

BT - ECS Transactions

A2 - Hartmann, J.-M.

A2 - Thean , A.

A2 - Ogura , A.

A2 - Gong , X.

A2 - Harame , D.

A2 - Caymax, M.

A2 - Niu , G

A2 - Schulze , A.

A2 - Liu , Q.

A2 - Mashi, G

A2 - Miyazaki , S.

A2 - Mai, A.

A2 - Osting , M.

PB - The Electrochemical Society, Inc.

T2 - 8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting

Y2 - 30 September 2018 through 4 October 2018

ER -

Porret C, Hikavyy A, Gomez Granados JF, Baudot S, Vohra A, Kunert B et al. Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration. In Hartmann JM, Thean A, Ogura A, Gong X, Harame D, Caymax M, Niu G, Schulze A, Liu Q, Mashi G, Miyazaki S, Mai A, Osting M, editors, ECS Transactions. 7 ed. Vol. 86. The Electrochemical Society, Inc. 2018. p. 163-175 doi: 10.1149/08607.0163ecst

Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration

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