Vibrational modes as the origin of dielectric loss at 0.27-100 THz in a - Si C: H

B. T. Buijtendorp; A. Endo; W. Jellema; K. Karatsu; K. Kouwenhoven; A. J. Van Der Linden; H. M. Veen; J. J.A. Baselmans; S. Vollebregt; null More Authors

doi:10.1103/PhysRevApplied.23.014035

Vibrational modes as the origin of dielectric loss at 0.27-100 THz in a - Si C: H

B. T. Buijtendorp^*, A. Endo, W. Jellema, K. Karatsu, K. Kouwenhoven, A. J. Van Der Linden, H. M. Veen, J. J.A. Baselmans, S. Vollebregt, More Authors

^*Corresponding author for this work

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Abstract

Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band (approximately 1-10 GHz) the dielectric loss at cryogenic temperatures and low electric field strengths is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band (approximately 0.1-1 THz) is not understood. We measured the loss of hydrogenated-amorphous-SiC films in the 0.27-100-THz range using superconducting-microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in hydrogenated amorphous SiC above 200 GHz.

Original language	English
Article number	014035
Number of pages	9
Journal	Physical Review Applied
Volume	23
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevApplied.23.014035
Publication status	Published - 2025

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Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

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title = "Vibrational modes as the origin of dielectric loss at 0.27-100 THz in a - Si C: H",

abstract = "Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band (approximately 1-10 GHz) the dielectric loss at cryogenic temperatures and low electric field strengths is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band (approximately 0.1-1 THz) is not understood. We measured the loss of hydrogenated-amorphous-SiC films in the 0.27-100-THz range using superconducting-microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in hydrogenated amorphous SiC above 200 GHz.",

author = "Buijtendorp, {B. T.} and A. Endo and W. Jellema and K. Karatsu and K. Kouwenhoven and {Van Der Linden}, {A. J.} and Veen, {H. M.} and Baselmans, {J. J.A.} and S. Vollebregt and {More Authors}",

note = "Green Open Access added to TU Delft Institutional Repository {\textquoteleft}You share, we take care!{\textquoteright} – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. ",

year = "2025",

doi = "10.1103/PhysRevApplied.23.014035",

language = "English",

volume = "23",

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AU - Buijtendorp, B. T.

AU - Endo, A.

AU - Jellema, W.

AU - Karatsu, K.

AU - Kouwenhoven, K.

AU - Van Der Linden, A. J.

AU - Veen, H. M.

AU - Baselmans, J. J.A.

AU - Vollebregt, S.

AU - More Authors, null

N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

PY - 2025

Y1 - 2025

N2 - Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band (approximately 1-10 GHz) the dielectric loss at cryogenic temperatures and low electric field strengths is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band (approximately 0.1-1 THz) is not understood. We measured the loss of hydrogenated-amorphous-SiC films in the 0.27-100-THz range using superconducting-microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in hydrogenated amorphous SiC above 200 GHz.

AB - Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band (approximately 1-10 GHz) the dielectric loss at cryogenic temperatures and low electric field strengths is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band (approximately 0.1-1 THz) is not understood. We measured the loss of hydrogenated-amorphous-SiC films in the 0.27-100-THz range using superconducting-microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in hydrogenated amorphous SiC above 200 GHz.

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JO - Physical Review Applied

JF - Physical Review Applied

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Vibrational modes as the origin of dielectric loss at 0.27-100 THz in a - Si C: H

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