Vortex pinning regimes in thin films of YBa2Cu3O7-δ

F. C. Klaassen; G. Doornbos; J. M. Huijbregtse; B. Dam; R. Griessen

doi:10.1016/S0921-4534(00)01059-5

Vortex pinning regimes in thin films of YBa₂Cu₃O_7-δ

F. C. Klaassen^*, G. Doornbos, J. M. Huijbregtse, B. Dam, R. Griessen

^*Corresponding author for this work

ChemE/Chemical Engineering

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Abstract

The field dependence of the superconducting current density j_s(B)and the pinning energy U_C(B) in thin films of YBa₂Cu₃O_7-δindicates three different pinning regimes. At low fields, μH < B* ≈ 0.7n_d,Φ₀s the density of dislocations), j_sB) is constant and U_c = 600 K at T 0 for all YBa₂Cu₃O_7-δfilms, independent of the density of dislocations. This is much lower than the pinning energy of a vortex in a single dislocation, for which U_c ≈ 6000 K. At intermediate fields, B* < μ₀H < 0.5 T, a sharp decrease of U_c is observed. For μ₀H > 0.5 T, U_c(B) is constant again, with U_C(B) ≈ 80 K for sputtered films and U_C(B) ≈ 200 K for laser ablated films.

Original language	English
Pages (from-to)	1463-1464
Number of pages	2
Journal	Physica C: Superconductivity and its Applications
Volume	341-348
Issue number	PART 2
DOIs	https://doi.org/10.1016/S0921-4534(00)01059-5
Publication status	Published - 2000

Bibliographical note

Funding Information:
We thank S. Freisem and J. Aarts of the University of Leiden for providing the sputtered sample. This work is part of the research program of FOM (Fundamenteel Onderzoek der Materie), which is financially supported by NWO (Nederlands Wetenschappelijk Onderzoek).

Access to Document

10.1016/S0921-4534(00)01059-5

Cite this

@article{3c072a16219b45c1b27f93f69dfc45df,

title = "Vortex pinning regimes in thin films of YBa2Cu3O7-δ",

abstract = "The field dependence of the superconducting current density js(B)and the pinning energy UC(B) in thin films of YBa2Cu3O7-δindicates three different pinning regimes. At low fields, μH < B* ≈ 0.7nd,Φ0s the density of dislocations), jsB) is constant and Uc = 600 K at T 0 for all YBa2Cu3O7-δfilms, independent of the density of dislocations. This is much lower than the pinning energy of a vortex in a single dislocation, for which Uc ≈ 6000 K. At intermediate fields, B* < μ0H < 0.5 T, a sharp decrease of Uc is observed. For μ0H > 0.5 T, Uc(B) is constant again, with UC(B) ≈ 80 K for sputtered films and UC(B) ≈ 200 K for laser ablated films.",

author = "Klaassen, {F. C.} and G. Doornbos and Huijbregtse, {J. M.} and B. Dam and R. Griessen",

note = "Funding Information: We thank S. Freisem and J. Aarts of the University of Leiden for providing the sputtered sample. This work is part of the research program of FOM (Fundamenteel Onderzoek der Materie), which is financially supported by NWO (Nederlands Wetenschappelijk Onderzoek).",

year = "2000",

doi = "10.1016/S0921-4534(00)01059-5",

language = "English",

volume = "341-348",

pages = "1463--1464",

journal = "Physica C: Superconductivity and its Applications",

issn = "0921-4534",

publisher = "Elsevier",

number = "PART 2",

}

TY - JOUR

T1 - Vortex pinning regimes in thin films of YBa2Cu3O7-δ

AU - Klaassen, F. C.

AU - Doornbos, G.

AU - Huijbregtse, J. M.

AU - Dam, B.

AU - Griessen, R.

N1 - Funding Information: We thank S. Freisem and J. Aarts of the University of Leiden for providing the sputtered sample. This work is part of the research program of FOM (Fundamenteel Onderzoek der Materie), which is financially supported by NWO (Nederlands Wetenschappelijk Onderzoek).

PY - 2000

Y1 - 2000

N2 - The field dependence of the superconducting current density js(B)and the pinning energy UC(B) in thin films of YBa2Cu3O7-δindicates three different pinning regimes. At low fields, μH < B* ≈ 0.7nd,Φ0s the density of dislocations), jsB) is constant and Uc = 600 K at T 0 for all YBa2Cu3O7-δfilms, independent of the density of dislocations. This is much lower than the pinning energy of a vortex in a single dislocation, for which Uc ≈ 6000 K. At intermediate fields, B* < μ0H < 0.5 T, a sharp decrease of Uc is observed. For μ0H > 0.5 T, Uc(B) is constant again, with UC(B) ≈ 80 K for sputtered films and UC(B) ≈ 200 K for laser ablated films.

AB - The field dependence of the superconducting current density js(B)and the pinning energy UC(B) in thin films of YBa2Cu3O7-δindicates three different pinning regimes. At low fields, μH < B* ≈ 0.7nd,Φ0s the density of dislocations), jsB) is constant and Uc = 600 K at T 0 for all YBa2Cu3O7-δfilms, independent of the density of dislocations. This is much lower than the pinning energy of a vortex in a single dislocation, for which Uc ≈ 6000 K. At intermediate fields, B* < μ0H < 0.5 T, a sharp decrease of Uc is observed. For μ0H > 0.5 T, Uc(B) is constant again, with UC(B) ≈ 80 K for sputtered films and UC(B) ≈ 200 K for laser ablated films.

UR - http://www.scopus.com/inward/record.url?scp=0342527710&partnerID=8YFLogxK

U2 - 10.1016/S0921-4534(00)01059-5

DO - 10.1016/S0921-4534(00)01059-5

M3 - Article

AN - SCOPUS:0342527710

SN - 0921-4534

VL - 341-348

SP - 1463

EP - 1464

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

IS - PART 2

ER -

Vortex pinning regimes in thin films of YBa₂Cu₃O_7-δ

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this