X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility

N Hrauda, JJ Zhang, J Stangl, A Rehman-Khan, G Bauer, M Stoffel, OG Schmist, V Jovanovic, LK Nanver

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	912-918
Number of pages	7
Journal	Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures
Volume	27
Issue number	2
Publication status	Published - 2009

Keywords

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title = "X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility",

keywords = "CWTS JFIS < 0.75",

author = "N Hrauda and JJ Zhang and J Stangl and A Rehman-Khan and G Bauer and M Stoffel and OG Schmist and V Jovanovic and LK Nanver",

year = "2009",

language = "Undefined/Unknown",

volume = "27",

pages = "912--918",

journal = "Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility

AU - Hrauda, N

AU - Zhang, JJ

AU - Stangl, J

AU - Rehman-Khan, A

AU - Bauer, G

AU - Stoffel, M

AU - Schmist, OG

AU - Jovanovic, V

AU - Nanver, LK

PY - 2009

Y1 - 2009

KW - CWTS JFIS < 0.75

M3 - Article

SN - 1071-1023

VL - 27

SP - 912

EP - 918

JO - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

IS - 2

ER -