X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

N Hrauda; J Zhang; E Wintersberger; T Etzelstorfer; B Mandl; J Stangl; D Carbone; V Holy; V Jovanovic; C Biasotto; LK Nanver; J Moers; D Grutzmacher; G Baur

doi:10.1021/nl2013289

X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

N Hrauda, J Zhang, E Wintersberger, T Etzelstorfer, B Mandl, J Stangl, D Carbone, V Holy, V Jovanovic, C Biasotto, LK Nanver, J Moers, D Grutzmacher, G Baur

Electronic Components, Technology and Materials

Research output: Contribution to journal › Article › Scientific › peer-review

64 Citations (Scopus)

Original language	English
Pages (from-to)	2875-2880
Number of pages	6
Journal	Nano Letters: a journal dedicated to nanoscience and nanotechnology
Volume	11
Issue number	7
DOIs	https://doi.org/10.1021/nl2013289
Publication status	Published - 2011

Keywords

academic journal papers
CWTS JFIS >= 2.00

Access to Document

10.1021/nl2013289

Cite this

Hrauda, N., Zhang, J., Wintersberger, E., Etzelstorfer, T., Mandl, B., Stangl, J., Carbone, D., Holy, V., Jovanovic, V., Biasotto, C., Nanver, LK., Moers, J., Grutzmacher, D., & Baur, G. (2011). X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor. Nano Letters: a journal dedicated to nanoscience and nanotechnology, 11(7), 2875-2880. https://doi.org/10.1021/nl2013289

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keywords = "academic journal papers, CWTS JFIS >= 2.00",

author = "N Hrauda and J Zhang and E Wintersberger and T Etzelstorfer and B Mandl and J Stangl and D Carbone and V Holy and V Jovanovic and C Biasotto and LK Nanver and J Moers and D Grutzmacher and G Baur",

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Hrauda, N, Zhang, J, Wintersberger, E, Etzelstorfer, T, Mandl, B, Stangl, J, Carbone, D, Holy, V, Jovanovic, V, Biasotto, C, Nanver, LK, Moers, J, Grutzmacher, D & Baur, G 2011, 'X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor', Nano Letters: a journal dedicated to nanoscience and nanotechnology, vol. 11, no. 7, pp. 2875-2880. https://doi.org/10.1021/nl2013289

TY - JOUR

T1 - X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

AU - Hrauda, N

AU - Zhang, J

AU - Wintersberger, E

AU - Etzelstorfer, T

AU - Mandl, B

AU - Stangl, J

AU - Carbone, D

AU - Holy, V

AU - Jovanovic, V

AU - Biasotto, C

AU - Nanver, LK

AU - Moers, J

AU - Grutzmacher, D

AU - Baur, G

PY - 2011

Y1 - 2011

KW - academic journal papers

KW - CWTS JFIS >= 2.00

U2 - 10.1021/nl2013289

DO - 10.1021/nl2013289

M3 - Article

SN - 1530-6984

VL - 11

SP - 2875

EP - 2880

JO - Nano Letters: a journal dedicated to nanoscience and nanotechnology

JF - Nano Letters: a journal dedicated to nanoscience and nanotechnology

IS - 7

ER -