Yield improvement for 3D wafer-to-wafer stacked memories

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Original language	English
Pages (from-to)	523-534
Number of pages	12
Journal	Journal of Electronic Testing: theory and applications
Volume	28
Issue number	4
Publication status	Published - 2012

Cite this

@article{abcb593a688b4f17a5627c2767acb484,

title = "Yield improvement for 3D wafer-to-wafer stacked memories",

author = "M Taouil and S Hamdioui",

year = "2012",

language = "English",

volume = "28",

pages = "523--534",

journal = "Journal of Electronic Testing: theory and applications",

issn = "0923-8174",

publisher = "Springer Science+Business Media",

number = "4",

}

TY - JOUR

T1 - Yield improvement for 3D wafer-to-wafer stacked memories

AU - Taouil, M

AU - Hamdioui, S

PY - 2012

Y1 - 2012

UR - http://www.springer.com/engineering/circuits+%26+systems/journal/10836

M3 - Article

VL - 28

SP - 523

EP - 534

JO - Journal of Electronic Testing: theory and applications

JF - Journal of Electronic Testing: theory and applications

SN - 0923-8174

IS - 4

ER -