1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs

V Jovanovic; M Poljak; T Suligoj; Y Civale; LK Nanver

1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs

V Jovanovic, M Poljak, T Suligoj, Y Civale, LK Nanver

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

Original language	Undefined/Unknown
Title of host publication	Proc. 67th IEEE Device Research Conference, DRC 2009
Editors	S Koester, D Gundlach, P Fay
Place of Publication	Los Alamitos, USA
Publisher	IEEE Society
Pages	261-262
Number of pages	2
ISBN (Print)	978-1-4244-3528-9
Publication status	Published - 2009
Event	67th IEEE Device Research Conference, DRC 2009, Pennsylvania, USA - Los Alamitos, USA Duration: 22 Jun 2009 → 24 Jun 2009

Publication series

Name
Publisher	IEEE

Conference

Conference	67th IEEE Device Research Conference, DRC 2009, Pennsylvania, USA
Period	22/06/09 → 24/06/09

Bibliographical note

ISSN 1548-3770

Keywords

Geen BTA classificatie

Cite this

@inproceedings{a310ce9913204b048d44b0883ad90106,

title = "1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs",

keywords = "Geen BTA classificatie",

author = "V Jovanovic and M Poljak and T Suligoj and Y Civale and LK Nanver",

note = "ISSN 1548-3770; null ; Conference date: 22-06-2009 Through 24-06-2009",

year = "2009",

language = "Undefined/Unknown",

isbn = "978-1-4244-3528-9",

publisher = "IEEE Society",

pages = "261--262",

editor = "S Koester and D Gundlach and P Fay",

booktitle = "Proc. 67th IEEE Device Research Conference, DRC 2009",

}

TY - GEN

T1 - 1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs

AU - Jovanovic, V

AU - Poljak, M

AU - Suligoj, T

AU - Civale, Y

AU - Nanver, LK

N1 - ISSN 1548-3770

PY - 2009

Y1 - 2009

KW - Geen BTA classificatie

M3 - Conference contribution

SN - 978-1-4244-3528-9

SP - 261

EP - 262

BT - Proc. 67th IEEE Device Research Conference, DRC 2009

A2 - Koester, S

A2 - Gundlach, D

A2 - Fay, P

PB - IEEE Society

CY - Los Alamitos, USA

Y2 - 22 June 2009 through 24 June 2009

ER -