1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs

V Jovanovic, M Poljak, T Suligoj, Y Civale, LK Nanver

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

2 Citations (Scopus)
Original languageUndefined/Unknown
Title of host publicationProc. 67th IEEE Device Research Conference, DRC 2009
EditorsS Koester, D Gundlach, P Fay
Place of PublicationLos Alamitos, USA
PublisherIEEE Society
Pages261-262
Number of pages2
ISBN (Print)978-1-4244-3528-9
Publication statusPublished - 2009
Event67th IEEE Device Research Conference, DRC 2009, Pennsylvania, USA - Los Alamitos, USA
Duration: 22 Jun 200924 Jun 2009

Publication series

Name
PublisherIEEE

Conference

Conference67th IEEE Device Research Conference, DRC 2009, Pennsylvania, USA
Period22/06/0924/06/09

Keywords

  • Geen BTA classificatie

Cite this

Jovanovic, V., Poljak, M., Suligoj, T., Civale, Y., & Nanver, LK. (2009). 1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs. In S. Koester, D. Gundlach, & P. Fay (Eds.), Proc. 67th IEEE Device Research Conference, DRC 2009 (pp. 261-262). IEEE Society.