A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices

T. Hensgens*, U. Mukhopadhyay, P. Barthelemy, R. F.L. Vermeulen, R. N. Schouten, S. Fallahi, G. C. Gardner, C. Reichl, W. Wegscheider, M. J. Manfra, L. M.K. Vandersypen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Capacitance spectroscopy provides a technique that allows one to directly probe the density of states of such two-dimensional electron systems. Here, we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control of density and periodic potential strength imposed on a two-dimensional electron gas. We characterize disorder levels and (in)homogeneity and develop and optimize different gating strategies at length scales where interactions are expected to be strong. A continuation of these ideas might see to fruition the emulation of interaction-driven Mott transitions or Hofstadter butterfly physics.

Original languageEnglish
Article number124305
JournalJournal of Applied Physics
Volume124
Issue number12
DOIs
Publication statusPublished - 2018

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