A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

K Souri; Y Chae; KAA Makinwa

doi:10.1109/ISSCC.2012.6176978

A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

K Souri, Y Chae, KAA Makinwa

Electronic Instrumentation

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

52 Citations (Scopus)

178 Downloads (Pure)

Abstract

This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20× less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2 nd -order ΔΣ conversion.

Original language	English
Title of host publication	Digest of Technical Papers 2012 IEEE International Solid-state Circuits Conference
Editors	L Fujino
Place of Publication	Piscataway, NJ
Publisher	IEEE Society
Pages	208-210
Number of pages	3
ISBN (Print)	978-1-4673-0377-4
DOIs	https://doi.org/10.1109/ISSCC.2012.6176978
Publication status	Published - 2012
Event	ISSCC 2012, San Francisco, California - Piscataway, NJ, USA Duration: 19 Feb 2012 → 23 Feb 2012

Conference

Conference	ISSCC 2012, San Francisco, California
Period	19/02/12 → 23/02/12

Bibliographical note

Accepted author manuscript

Keywords

Temperature sensors
Calibration
Energy efficiency
Capacitors
Temperature measurement
Energy resolution

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ISSCC.2012.6176978

2193538 - MO117_VerificationAccepted author manuscript, 1.05 MB

Cite this

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title = "A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C",

abstract = "This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20× less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2 nd -order ΔΣ conversion.",

keywords = "Temperature sensors, Calibration, Energy efficiency, Capacitors, Temperature measurement, Energy resolution",

author = "K Souri and Y Chae and KAA Makinwa",

note = "Accepted author manuscript; ISSCC 2012, San Francisco, California ; Conference date: 19-02-2012 Through 23-02-2012",

year = "2012",

doi = "10.1109/ISSCC.2012.6176978",

language = "English",

isbn = "978-1-4673-0377-4",

pages = "208--210",

editor = "L Fujino",

booktitle = "Digest of Technical Papers 2012 IEEE International Solid-state Circuits Conference",

publisher = "IEEE Society",

}

Souri, K, Chae, Y & Makinwa, KAA 2012, A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C. in L Fujino (ed.), Digest of Technical Papers 2012 IEEE International Solid-state Circuits Conference., 6176978, IEEE Society, Piscataway, NJ, pp. 208-210, ISSCC 2012, San Francisco, California, 19/02/12. https://doi.org/10.1109/ISSCC.2012.6176978

A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C. / Souri, K; Chae, Y; Makinwa, KAA.
Digest of Technical Papers 2012 IEEE International Solid-state Circuits Conference. ed. / L Fujino. Piscataway, NJ: IEEE Society, 2012. p. 208-210 6176978.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

AU - Souri, K

AU - Chae, Y

AU - Makinwa, KAA

N1 - Accepted author manuscript

PY - 2012

Y1 - 2012

N2 - This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20× less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2 nd -order ΔΣ conversion.

AB - This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20× less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2 nd -order ΔΣ conversion.

KW - Temperature sensors

KW - Calibration

KW - Energy efficiency

KW - Capacitors

KW - Temperature measurement

KW - Energy resolution

U2 - 10.1109/ISSCC.2012.6176978

DO - 10.1109/ISSCC.2012.6176978

M3 - Conference contribution

SN - 978-1-4673-0377-4

SP - 208

EP - 210

BT - Digest of Technical Papers 2012 IEEE International Solid-state Circuits Conference

A2 - Fujino, L

PB - IEEE Society

CY - Piscataway, NJ

T2 - ISSCC 2012, San Francisco, California

Y2 - 19 February 2012 through 23 February 2012

ER -

A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

Abstract

Conference

Bibliographical note

Keywords

UN SDGs

Access to Document

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Cite this