A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

K Souri, Y Chae, KAA Makinwa

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

50 Citations (Scopus)
85 Downloads (Pure)

Abstract

This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20× less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2 nd -order ΔΣ conversion.
Original languageEnglish
Title of host publicationDigest of Technical Papers 2012 IEEE International Solid-state Circuits Conference
EditorsL Fujino
Place of PublicationPiscataway, NJ
PublisherIEEE Society
Pages208-210
Number of pages3
ISBN (Print)978-1-4673-0377-4
DOIs
Publication statusPublished - 2012
EventISSCC 2012, San Francisco, California - Piscataway, NJ, USA
Duration: 19 Feb 201223 Feb 2012

Conference

ConferenceISSCC 2012, San Francisco, California
Period19/02/1223/02/12

Bibliographical note

Accepted author manuscript

Keywords

  • Temperature sensors
  • Calibration
  • Energy efficiency
  • Capacitors
  • Temperature measurement
  • Energy resolution

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