A High-Mobility Hole Bilayer in a Germanium Double Quantum Well

Alberto Tosato, Beatrice Ferrari, Amir Sammak, Alexander R. Hamilton, Menno Veldhorst, Michele Virgilio, Giordano Scappucci*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)
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A hole bilayer in a strained germanium double quantum well is designed, fabricated, and studied. Magnetotransport characterization of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of (Formula presented.) and a low percolation density of (Formula presented.). The individual population of the channels from the interference patterns of the Landau fan diagram was resolved. At a density of (Formula presented.) the system is in resonance and an anti-crossing of the first two bilayer subbands is observed and a symmetric-antisymmetric gap of (Formula presented.) is estimated, in agreement with Schrödinger-Poisson simulations.

Original languageEnglish
Article number2100167
Number of pages5
JournalAdvanced Quantum Technologies
Issue number5
Publication statusPublished - 2022


  • 3D
  • circuits
  • germanium
  • holes
  • qubits


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