A High-Mobility Hole Bilayer in a Germanium Double Quantum Well

Alberto Tosato, Beatrice Ferrari, Amir Sammak, Alexander R. Hamilton, Menno Veldhorst, Michele Virgilio, Giordano Scappucci*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

A hole bilayer in a strained germanium double quantum well is designed, fabricated, and studied. Magnetotransport characterization of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of (Formula presented.) and a low percolation density of (Formula presented.). The individual population of the channels from the interference patterns of the Landau fan diagram was resolved. At a density of (Formula presented.) the system is in resonance and an anti-crossing of the first two bilayer subbands is observed and a symmetric-antisymmetric gap of (Formula presented.) is estimated, in agreement with Schrödinger-Poisson simulations.

Original languageEnglish
Article number2100167
Number of pages5
JournalAdvanced Quantum Technologies
Volume5
Issue number5
DOIs
Publication statusPublished - 2022

Keywords

  • 3D
  • circuits
  • germanium
  • holes
  • qubits

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