A High-Mobility Hole Bilayer in a Germanium Double Quantum Well

Alberto Tosato; Beatrice Ferrari; Amir Sammak; Alexander R. Hamilton; Menno Veldhorst; Michele Virgilio; Giordano Scappucci

doi:10.1002/qute.202100167

A High-Mobility Hole Bilayer in a Germanium Double Quantum Well

Alberto Tosato, Beatrice Ferrari, Amir Sammak, Alexander R. Hamilton, Menno Veldhorst, Michele Virgilio, Giordano Scappucci^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

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Abstract

A hole bilayer in a strained germanium double quantum well is designed, fabricated, and studied. Magnetotransport characterization of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of (Formula presented.) and a low percolation density of (Formula presented.). The individual population of the channels from the interference patterns of the Landau fan diagram was resolved. At a density of (Formula presented.) the system is in resonance and an anti-crossing of the first two bilayer subbands is observed and a symmetric-antisymmetric gap of (Formula presented.) is estimated, in agreement with Schrödinger-Poisson simulations.

Original language	English
Article number	2100167
Number of pages	5
Journal	Advanced Quantum Technologies
Volume	5
Issue number	5
DOIs	https://doi.org/10.1002/qute.202100167
Publication status	Published - 2022

Keywords

3D
circuits
germanium
holes
qubits

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10.1002/qute.202100167

Adv Quantum Tech - 2022 - Tosato - A High%E2%80%90Mobility Hole Bilayer in a Germanium Double Quantum WellFinal published version, 1.23 MBLicence: CC BY-NC-ND

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abstract = "A hole bilayer in a strained germanium double quantum well is designed, fabricated, and studied. Magnetotransport characterization of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of (Formula presented.) and a low percolation density of (Formula presented.). The individual population of the channels from the interference patterns of the Landau fan diagram was resolved. At a density of (Formula presented.) the system is in resonance and an anti-crossing of the first two bilayer subbands is observed and a symmetric-antisymmetric gap of (Formula presented.) is estimated, in agreement with Schr{\"o}dinger-Poisson simulations.",

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AU - Tosato, Alberto

AU - Ferrari, Beatrice

AU - Sammak, Amir

AU - Hamilton, Alexander R.

AU - Veldhorst, Menno

AU - Virgilio, Michele

AU - Scappucci, Giordano

PY - 2022

Y1 - 2022

N2 - A hole bilayer in a strained germanium double quantum well is designed, fabricated, and studied. Magnetotransport characterization of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of (Formula presented.) and a low percolation density of (Formula presented.). The individual population of the channels from the interference patterns of the Landau fan diagram was resolved. At a density of (Formula presented.) the system is in resonance and an anti-crossing of the first two bilayer subbands is observed and a symmetric-antisymmetric gap of (Formula presented.) is estimated, in agreement with Schrödinger-Poisson simulations.

AB - A hole bilayer in a strained germanium double quantum well is designed, fabricated, and studied. Magnetotransport characterization of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of (Formula presented.) and a low percolation density of (Formula presented.). The individual population of the channels from the interference patterns of the Landau fan diagram was resolved. At a density of (Formula presented.) the system is in resonance and an anti-crossing of the first two bilayer subbands is observed and a symmetric-antisymmetric gap of (Formula presented.) is estimated, in agreement with Schrödinger-Poisson simulations.

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A High-Mobility Hole Bilayer in a Germanium Double Quantum Well

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