A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology

Jiarui Mo, Jinglin Li, Yaqian Zhang, Joost Romijn, Alexander May, Tobias Erlbacher, Guoqi Zhang, Sten Vollebregt

Research output: Contribution to journalArticleScientificpeer-review


In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determination ${R}^{{2}}$ = 99.98%) is achieved when the current density is 0.53 mA/cm2. The maximum sensitivity of the p-n diode is 3.04 mV/°C. The temperature sensor is fully compatible with Fraunhofer Institute (FHG) IISB's open SiC CMOS (complementary metal-oxide-semiconductor) technology, thus enabling the monolithic integration with SiC readout circuits for high-temperature applications. The sensor also features a simple fabrication process. To our knowledge, the presented device is the first SiC diode temperature sensor that does not require a mesa etch or backside contacts.

Original languageEnglish
Pages (from-to)995-998
Number of pages4
JournalIEEE Electron Device Letters
Issue number6
Publication statusPublished - 2023

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.


  • high temperature
  • Linearity
  • p-n diode
  • Schottky diodes
  • Sensitivity
  • Silicon carbide
  • Temperature distribution
  • Temperature measurement
  • temperature sensor
  • Temperature sensors


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