Abstract
This paper presents a CMOS 40nm microcontroller where for the first time, stacked voltage domains are used. The system features an ARM Cortex M0+ processor, 4kB ROM, 16kB SRAM, peripherals, and an on-chip switched-capacitor voltage regulator (SCVR). By using voltage stacking the test chip achieves state-of-the-art (96%) power-conversion efficiency and observed power savings run from 23% to 63% depending upon the payload current, while supply voltage variations are reduced from 5.6mV to 3.8mV (RMS).
Original language | English |
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Title of host publication | 2016 IEEE Symposium on VLSI Circuits, VLSI-Circuits 2016 |
Subtitle of host publication | Digest of Technical Papers |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 1-2 |
Number of pages | 2 |
ISBN (Electronic) | 978-1-5090-0635-9 |
DOIs | |
Publication status | Published - 22 Sept 2016 |
Event | 30th IEEE Symposium on VLSI Circuits, VLSI Circuits 2016 - Honolulu, United States Duration: 14 Jun 2016 → 17 Jun 2016 |
Conference
Conference | 30th IEEE Symposium on VLSI Circuits, VLSI Circuits 2016 |
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Country/Territory | United States |
City | Honolulu |
Period | 14/06/16 → 17/06/16 |
Keywords
- Power capacitors
- Stacking
- Read only memory
- Random access memory
- Voltage control
- Clocks
- Current measurement