A new trench bipolar transistor for RF applications

RJE Hueting, JW Slotboom, J Melai, P Agarwal, PHC Magnee

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	1108-1113
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	7
Publication status	Published - 2004

Keywords

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title = "A new trench bipolar transistor for RF applications",

keywords = "academic journal papers, ZX CWTS 1.00 <= JFIS < 3.00",

author = "RJE Hueting and JW Slotboom and J Melai and P Agarwal and PHC Magnee",

year = "2004",

language = "Undefined/Unknown",

volume = "51",

pages = "1108--1113",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

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TY - JOUR

T1 - A new trench bipolar transistor for RF applications

AU - Hueting, RJE

AU - Slotboom, JW

AU - Melai, J

AU - Agarwal, P

AU - Magnee, PHC

PY - 2004

Y1 - 2004

KW - academic journal papers

KW - ZX CWTS 1.00 <= JFIS < 3.00

M3 - Article

SN - 0018-9383

VL - 51

SP - 1108

EP - 1113

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

ER -