A study of graphene nanoribbon-based gate performance robustness under temperature variations

Y. Jiang, N. Cucu Laurenciu, H. Wang, S. D. Cotofana

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As CMOS scaling is reaching its limits, high power density and leakage, low reliability, and increasing IC production costs are prompting for developing new materials, devices, architectures, and computation paradigms. Additionally, temperature variations have a significant impact on devices and circuits reliability and performance. Graphene's remarkable properties make it a promising post Silicon frontrunner for carbon-based nanoelectronics. While for CMOS gates temperature effects have been largely investigated, for gates implemented with atomic-level Graphene Nanoribbons (GNRs), such effects have not been explored. This paper presents the results of such an analysis performed on a set of GNR-based Boolean gates by varying the operation temperature within the military range, i.e., -55°C to 125°C, and evaluating by means of SPICE simulations gate output signal integrity, propagation delay, and power consumption. Our simulation results reveal that GNR-based gates are robust with respect to temperature variation, e.g., 5.2% and 5.3% maximum variations of NAND output logic '1' (VOH) and logic '0' ($V$OL) voltage levels, respectively. Moreover, even in the worst condition GNR-based gates outperform CMOS FinFET 7nm counterparts, e.g., 1.6× smaller delay and 185× less power consumption for the INV case, which is strengthening their great potential as basic building blocks for future reliable, low-power, nanoscale carbon-based electronics.

Original languageEnglish
Title of host publicationNANO 2020 - 20th IEEE International Conference on Nanotechnology, Proceedings
Subtitle of host publicationProceedings
Number of pages5
ISBN (Electronic) 978-1-7281-8264-3
ISBN (Print)978-1-7281-8265-0
Publication statusPublished - 2020
Event20th IEEE International Conference on Nanotechnology, NANO 2020 - Virtual, Online, Canada
Duration: 29 Jul 202031 Jul 2020

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380


Conference20th IEEE International Conference on Nanotechnology, NANO 2020
CityVirtual, Online

Bibliographical note

Accepted author manuscript


  • Boolean Gates
  • Carbon Nanoelectronics
  • GNR
  • Graphene
  • NEGF
  • Phonon Scattering
  • Reliability
  • Temperature Effects

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