TY - GEN
T1 - A study of graphene nanoribbon-based gate performance robustness under temperature variations
AU - Jiang, Y.
AU - Laurenciu, N. Cucu
AU - Wang, H.
AU - Cotofana, S. D.
N1 - Accepted author manuscript
PY - 2020
Y1 - 2020
N2 - As CMOS scaling is reaching its limits, high power density and leakage, low reliability, and increasing IC production costs are prompting for developing new materials, devices, architectures, and computation paradigms. Additionally, temperature variations have a significant impact on devices and circuits reliability and performance. Graphene's remarkable properties make it a promising post Silicon frontrunner for carbon-based nanoelectronics. While for CMOS gates temperature effects have been largely investigated, for gates implemented with atomic-level Graphene Nanoribbons (GNRs), such effects have not been explored. This paper presents the results of such an analysis performed on a set of GNR-based Boolean gates by varying the operation temperature within the military range, i.e., -55°C to 125°C, and evaluating by means of SPICE simulations gate output signal integrity, propagation delay, and power consumption. Our simulation results reveal that GNR-based gates are robust with respect to temperature variation, e.g., 5.2% and 5.3% maximum variations of NAND output logic '1' (VOH) and logic '0' ($V$OL) voltage levels, respectively. Moreover, even in the worst condition GNR-based gates outperform CMOS FinFET 7nm counterparts, e.g., 1.6× smaller delay and 185× less power consumption for the INV case, which is strengthening their great potential as basic building blocks for future reliable, low-power, nanoscale carbon-based electronics.
AB - As CMOS scaling is reaching its limits, high power density and leakage, low reliability, and increasing IC production costs are prompting for developing new materials, devices, architectures, and computation paradigms. Additionally, temperature variations have a significant impact on devices and circuits reliability and performance. Graphene's remarkable properties make it a promising post Silicon frontrunner for carbon-based nanoelectronics. While for CMOS gates temperature effects have been largely investigated, for gates implemented with atomic-level Graphene Nanoribbons (GNRs), such effects have not been explored. This paper presents the results of such an analysis performed on a set of GNR-based Boolean gates by varying the operation temperature within the military range, i.e., -55°C to 125°C, and evaluating by means of SPICE simulations gate output signal integrity, propagation delay, and power consumption. Our simulation results reveal that GNR-based gates are robust with respect to temperature variation, e.g., 5.2% and 5.3% maximum variations of NAND output logic '1' (VOH) and logic '0' ($V$OL) voltage levels, respectively. Moreover, even in the worst condition GNR-based gates outperform CMOS FinFET 7nm counterparts, e.g., 1.6× smaller delay and 185× less power consumption for the INV case, which is strengthening their great potential as basic building blocks for future reliable, low-power, nanoscale carbon-based electronics.
KW - Boolean Gates
KW - Carbon Nanoelectronics
KW - GNR
KW - Graphene
KW - NEGF
KW - Phonon Scattering
KW - Reliability
KW - Temperature Effects
UR - http://www.scopus.com/inward/record.url?scp=85091005242&partnerID=8YFLogxK
U2 - 10.1109/NANO47656.2020.9183694
DO - 10.1109/NANO47656.2020.9183694
M3 - Conference contribution
SN - 978-1-7281-8265-0
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 62
EP - 66
BT - NANO 2020 - 20th IEEE International Conference on Nanotechnology, Proceedings
PB - IEEE
T2 - 20th IEEE International Conference on Nanotechnology, NANO 2020
Y2 - 29 July 2020 through 31 July 2020
ER -