A study to improve light confinement and rear-surface passivation in a thin-Cu(In, Ga)Se2 solar cell

S. Suresh, J. de Wild, T. Kohl, D. G. Buldu, G. Brammertz, M. Meuris, J. Poortmans, O. Isabella, M. Zeman, B. Vermang

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Abstract

Reducing the absorber layer thickness below 1 μm for a regular copper indium gallium di-selenide (CIGS) solar cell lowers the minimum quality requirements for the absorber layer due to shorter electron diffusion length. Additionally, it reduces material costs and production time. Yet, having such a thin absorber reduces the cell efficiency significantly. This is due to incomplete light absorption and high Molybdenum/CIGS rear-surface recombination [1]. The aim of this research is to implement some innovative rear surface modifications on a 430 nm thick CIGS absorber layer to reduce both these affects: an aluminium oxide passivation layer to reduce the back-surface recombination and point contact openings using nano-particles for electrical contact. The impact of the implementation of all these rear-surface modifications on the opto-electrical properties of the CIGS solar cell will be discussed and analyzed in this paper.

Original languageEnglish
Pages (from-to)399-403
Number of pages5
JournalThin Solid Films
Volume669
DOIs
Publication statusPublished - 2019

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    Suresh, S., de Wild, J., Kohl, T., Buldu, D. G., Brammertz, G., Meuris, M., Poortmans, J., Isabella, O., Zeman, M., & Vermang, B. (2019). A study to improve light confinement and rear-surface passivation in a thin-Cu(In, Ga)Se2 solar cell. Thin Solid Films, 669, 399-403. https://doi.org/10.1016/j.tsf.2018.11.027