A Survey of Test and Reliability Solutions for Magnetic Random Access Memories

Patrick Girard, Yuanqing Cheng, Arnaud Virazel, Weisheng Zhao, Rajendra Bishnoi, Mehdi B. Tahoori

Research output: Contribution to journalArticleScientificpeer-review

7 Downloads (Pure)

Abstract

Memories occupy most of the silicon area in nowadays' system-on-chips and contribute to a significant part of system power consumption. Though widely used, nonvolatile Flash memories still suffer from several drawbacks. Magnetic random access memories (MRAMs) have the potential to mitigate most of the Flash shortcomings. Moreover, it is predicted that they could be used for DRAM and SRAM replacement. However, they are prone to manufacturing defects and runtime failures as any other type of memory. This article provides an up-to-date and practical coverage of MRAM test and reliability solutions existing in the literature. After some background on existing MRAM technologies, defectiveness and reliability issues are discussed, as well as functional fault models used for MRAM. This article is dedicated to a summarized description of existing test and reliability improvement methods developed so far for various MRAM technologies. The last part of this article gives some perspectives on this hot topic.

Original languageEnglish
Number of pages21
JournalProceedings of the IEEE
DOIs
Publication statusE-pub ahead of print - 2020

Keywords

  • Magnetic random access memory (MRAM)
  • Magnetic switching
  • Magnetic tunneling
  • Memory management
  • nonvolatile memories
  • Nonvolatile memory
  • Random access memory
  • Reliability
  • reliability
  • spintronics
  • Switches
  • test.

Fingerprint Dive into the research topics of 'A Survey of Test and Reliability Solutions for Magnetic Random Access Memories'. Together they form a unique fingerprint.

Cite this