A wideband, dual-path, millimeter-wave power amplifier with 20 dBm output power and PAE above 15% in 130 nm SiGe-BiCMOS

Y Zhao, JR Long

Research output: Contribution to journal › Article › Scientific › peer-review

91 Citations (Scopus)

Original language	English
Pages (from-to)	1981-1997
Number of pages	17
Journal	IEEE Journal of Solid State Circuits
Volume	47
Issue number	9
DOIs	https://doi.org/10.1109/JSSC.2012.2201275
Publication status	Published - 2012

Harvest
Article number: 6276305

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title = "A wideband, dual-path, millimeter-wave power amplifier with 20 dBm output power and PAE above 15% in 130 nm SiGe-BiCMOS",

author = "Y Zhao and JR Long",

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year = "2012",

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journal = "IEEE Journal of Solid State Circuits",

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T1 - A wideband, dual-path, millimeter-wave power amplifier with 20 dBm output power and PAE above 15% in 130 nm SiGe-BiCMOS

AU - Zhao, Y

AU - Long, JR

N1 - Harvest Article number: 6276305

PY - 2012

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U2 - 10.1109/JSSC.2012.2201275

DO - 10.1109/JSSC.2012.2201275

M3 - Article

SN - 0018-9200

VL - 47

SP - 1981

EP - 1997

JO - IEEE Journal of Solid State Circuits

JF - IEEE Journal of Solid State Circuits

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