Apparent depths of B and Ge deltas in Si as measured by secondary ion mass spectrometry.

ZX Jiang, PFA Alkemade, CH Tung, JLF Wang

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)
    Original languageUndefined/Unknown
    Pages (from-to)706-712
    Number of pages7
    JournalJournal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures
    Issue number2
    Publication statusPublished - 2000

    Bibliographical note

    Mar/Apr 2000


    • ZX Int.klas.verslagjaar < 2002

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