Apparent depths of B and Ge deltas in Si as measured by secondary ion mass spectrometry.

ZX Jiang, PFA Alkemade, CH Tung, JLF Wang

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	706-712
Number of pages	7
Journal	Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures
Volume	18
Issue number	2
Publication status	Published - 2000

Mar/Apr 2000

Keywords

@article{f1db5eb992834af6a0ac04d8dfbf2b58,

title = "Apparent depths of B and Ge deltas in Si as measured by secondary ion mass spectrometry.",

keywords = "ZX Int.klas.verslagjaar < 2002",

author = "ZX Jiang and PFA Alkemade and CH Tung and JLF Wang",

note = "Mar/Apr 2000",

year = "2000",

language = "Undefined/Unknown",

volume = "18",

pages = "706--712",

journal = "Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Apparent depths of B and Ge deltas in Si as measured by secondary ion mass spectrometry.

AU - Jiang, ZX

AU - Alkemade, PFA

AU - Tung, CH

AU - Wang, JLF

N1 - Mar/Apr 2000

PY - 2000

Y1 - 2000

KW - ZX Int.klas.verslagjaar < 2002

M3 - Article

SN - 1071-1023

VL - 18

SP - 706

EP - 712

JO - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

IS - 2

ER -