Arbitrarily shallow arsenic deposited junctions on silicon tuned by excimer laser annealing

G Lorito; L Qi; LK Nanver

doi:10.1109/ICSICT.2010.5667505

Arbitrarily shallow arsenic deposited junctions on silicon tuned by excimer laser annealing

G Lorito, L Qi, LK Nanver

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

Original language	English
Title of host publication	Proceedings 2010 10th IEEE International Conference on Solid-State and Integrated circuit Technology
Editors	Ting-Ao Tang, Yu-Long Jiang
Place of Publication	Piscataway, NJ
Publisher	IEEE Society
Pages	972-974
Number of pages	3
ISBN (Print)	978-1-4244-5797-7
DOIs	https://doi.org/10.1109/ICSICT.2010.5667505
Publication status	Published - 2010
Event	ICSICT 2010: 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 1 Nov 2010 → 4 Nov 2010 Conference number: 10

Publication series

Name
Publisher	IEEE

Conference

Conference	ICSICT 2010
Abbreviated title	ICSICT 2010
Country/Territory	China
City	Shanghai
Period	1/11/10 → 4/11/10

Access to Document

10.1109/ICSICT.2010.5667505

Cite this

@inproceedings{0802d431dc8a41f0bc1197ca44a582be,

title = "Arbitrarily shallow arsenic deposited junctions on silicon tuned by excimer laser annealing",

author = "G Lorito and L Qi and LK Nanver",

year = "2010",

doi = "10.1109/ICSICT.2010.5667505",

language = "English",

isbn = "978-1-4244-5797-7",

publisher = "IEEE Society",

pages = "972--974",

editor = "Ting-Ao Tang and Yu-Long Jiang",

booktitle = "Proceedings 2010 10th IEEE International Conference on Solid-State and Integrated circuit Technology",

note = "ICSICT 2010 : 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2010 ; Conference date: 01-11-2010 Through 04-11-2010",

}

Lorito, G, Qi, L & Nanver, LK 2010, Arbitrarily shallow arsenic deposited junctions on silicon tuned by excimer laser annealing. in T-A Tang & Y-L Jiang (eds), Proceedings 2010 10th IEEE International Conference on Solid-State and Integrated circuit Technology. IEEE Society, Piscataway, NJ, pp. 972-974, ICSICT 2010, Shanghai, China, 1/11/10. https://doi.org/10.1109/ICSICT.2010.5667505

Arbitrarily shallow arsenic deposited junctions on silicon tuned by excimer laser annealing. / Lorito, G; Qi, L; Nanver, LK.
Proceedings 2010 10th IEEE International Conference on Solid-State and Integrated circuit Technology. ed. / Ting-Ao Tang; Yu-Long Jiang. Piscataway, NJ: IEEE Society, 2010. p. 972-974.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Arbitrarily shallow arsenic deposited junctions on silicon tuned by excimer laser annealing

AU - Lorito, G

AU - Qi, L

AU - Nanver, LK

N1 - Conference code: 10

PY - 2010

Y1 - 2010

U2 - 10.1109/ICSICT.2010.5667505

DO - 10.1109/ICSICT.2010.5667505

M3 - Conference contribution

SN - 978-1-4244-5797-7

SP - 972

EP - 974

BT - Proceedings 2010 10th IEEE International Conference on Solid-State and Integrated circuit Technology

A2 - Tang, Ting-Ao

A2 - Jiang, Yu-Long

PB - IEEE Society

CY - Piscataway, NJ

T2 - ICSICT 2010

Y2 - 1 November 2010 through 4 November 2010

ER -