Surface-activated direct bonding of diamond (100) and c-plane sapphire with high transparency for quantum applications

Tetsuya Miyatake; Kenichi Kawaguchi; Manabu Ohtomo; Toshiki Iwai; Tetsuro Ishiguro; Yoshiyasu Doi; Jeffrel Hermias; Salahuddin Nur; Ryoichi Ishihara; Shintaro Sato

doi:10.35848/1347-4065/acf42a

Surface-activated direct bonding of diamond (100) and c-plane sapphire with high transparency for quantum applications

Tetsuya Miyatake^*, Kenichi Kawaguchi^*, Manabu Ohtomo, Toshiki Iwai, Tetsuro Ishiguro, Yoshiyasu Doi, Jeffrel Hermias, Salahuddin Nur, Ryoichi Ishihara, Shintaro Sato

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Surface-activated direct bonding of diamond (100) and c-plane sapphire substrates is investigated using Ar atom beam irradiation and high-pressure contact at RT. The success probability of bonding strongly depends on the surface properties, i.e, atomic smoothness for the micron-order area and global flatness for the entire substrate. Structural analysis reveals that transformation from sapphire to Al-rich amorphous layer is key to obtaining stable bonding. The beam irradiation time has optimal conditions for sufficiently strong bonding, and strong bonding with a shear strength of more than 14 MPa is successfully realized. Moreover, by evaluating the photoluminescence of nitrogen-vacancy centers in the diamond substrate, the bonding interface is confirmed to have high transparency in the visible wavelength region. These results indicate that the method used in this work is a promising fabrication platform for quantum modules using diamonds.

Original language	English
Article number	096503
Number of pages	8
Journal	Japanese Journal of Applied Physics
Volume	62
Issue number	9
DOIs	https://doi.org/10.35848/1347-4065/acf42a
Publication status	Published - 2023

Keywords

c-plane sapphire
diamond (100)
quantum applications
surface-activated direct bonding

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Miyatake_2023_Jpn._J._Appl._Phys._62_096503Final published version, 1.17 MBLicence: CC BY

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title = "Surface-activated direct bonding of diamond (100) and c-plane sapphire with high transparency for quantum applications",

abstract = "Surface-activated direct bonding of diamond (100) and c-plane sapphire substrates is investigated using Ar atom beam irradiation and high-pressure contact at RT. The success probability of bonding strongly depends on the surface properties, i.e, atomic smoothness for the micron-order area and global flatness for the entire substrate. Structural analysis reveals that transformation from sapphire to Al-rich amorphous layer is key to obtaining stable bonding. The beam irradiation time has optimal conditions for sufficiently strong bonding, and strong bonding with a shear strength of more than 14 MPa is successfully realized. Moreover, by evaluating the photoluminescence of nitrogen-vacancy centers in the diamond substrate, the bonding interface is confirmed to have high transparency in the visible wavelength region. These results indicate that the method used in this work is a promising fabrication platform for quantum modules using diamonds.",

keywords = "c-plane sapphire, diamond (100), quantum applications, surface-activated direct bonding",

author = "Tetsuya Miyatake and Kenichi Kawaguchi and Manabu Ohtomo and Toshiki Iwai and Tetsuro Ishiguro and Yoshiyasu Doi and Jeffrel Hermias and Salahuddin Nur and Ryoichi Ishihara and Shintaro Sato",

year = "2023",

doi = "10.35848/1347-4065/acf42a",

language = "English",

volume = "62",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Surface-activated direct bonding of diamond (100) and c-plane sapphire with high transparency for quantum applications

AU - Miyatake, Tetsuya

AU - Kawaguchi, Kenichi

AU - Ohtomo, Manabu

AU - Iwai, Toshiki

AU - Ishiguro, Tetsuro

AU - Doi, Yoshiyasu

AU - Hermias, Jeffrel

AU - Nur, Salahuddin

AU - Ishihara, Ryoichi

AU - Sato, Shintaro

PY - 2023

Y1 - 2023

N2 - Surface-activated direct bonding of diamond (100) and c-plane sapphire substrates is investigated using Ar atom beam irradiation and high-pressure contact at RT. The success probability of bonding strongly depends on the surface properties, i.e, atomic smoothness for the micron-order area and global flatness for the entire substrate. Structural analysis reveals that transformation from sapphire to Al-rich amorphous layer is key to obtaining stable bonding. The beam irradiation time has optimal conditions for sufficiently strong bonding, and strong bonding with a shear strength of more than 14 MPa is successfully realized. Moreover, by evaluating the photoluminescence of nitrogen-vacancy centers in the diamond substrate, the bonding interface is confirmed to have high transparency in the visible wavelength region. These results indicate that the method used in this work is a promising fabrication platform for quantum modules using diamonds.

AB - Surface-activated direct bonding of diamond (100) and c-plane sapphire substrates is investigated using Ar atom beam irradiation and high-pressure contact at RT. The success probability of bonding strongly depends on the surface properties, i.e, atomic smoothness for the micron-order area and global flatness for the entire substrate. Structural analysis reveals that transformation from sapphire to Al-rich amorphous layer is key to obtaining stable bonding. The beam irradiation time has optimal conditions for sufficiently strong bonding, and strong bonding with a shear strength of more than 14 MPa is successfully realized. Moreover, by evaluating the photoluminescence of nitrogen-vacancy centers in the diamond substrate, the bonding interface is confirmed to have high transparency in the visible wavelength region. These results indicate that the method used in this work is a promising fabrication platform for quantum modules using diamonds.

KW - c-plane sapphire

KW - diamond (100)

KW - quantum applications

KW - surface-activated direct bonding

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U2 - 10.35848/1347-4065/acf42a

DO - 10.35848/1347-4065/acf42a

M3 - Article

AN - SCOPUS:85174261426

SN - 0021-4922

VL - 62

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9

M1 - 096503

ER -

Surface-activated direct bonding of diamond (100) and c-plane sapphire with high transparency for quantum applications

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