Ryoichi Ishihara (1967) is an associate professor in Electrical Engineering, specialized in thin-film material, devices and 3D integration. 

Highlights of Ishihara’s career include the first demonstration of TFTs inside large Si grain (1996), the location- and orientation-control of Si crystals (2000, 2006) by laser crystallization, the monolithic 3D-IC using single-grain TFTs (2008), the ultra-high mobility Ge TFTs (2010), and carbon nanotube vertical interconnect via’s (2013), and the first solution processed flexible Si TFTs on a plastic (2013).

His current focus is on fabrication of scalable qubit and advanced packaging technology for integration of qubit in diamond for quantum computer and sensors, and also fabrication of printed transistors and memristors for neuromorphic computer 

Ishihara received the PhD in Physical Electronics from Tokyo Institute of Technology (1996). After moving to TU Delft in the same year, he has established new activity of large area electronics using thin-film transistors (TFTs).