Buried-channel semiconductor heterostructures with enhanced band offset

G. Scappucci (Inventor), A. Tosato (Inventor)

Research output: Patent

Original languageEnglish
IPCH01L, B82Y
Priority date6/05/22
Publication statusPublished - 2023

Bibliographical note

Patent: OCT-21-035
Applicant: TU Delft

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