Crossed InSb nanowire junctions for Majorana operations

Diana Car, Sasa Gazibegovic, Stijn Balk, Sonia Conesa Boj, Elham Fadaly, H. Zhang, Roy Op Het Veld, Marcel A. Verheijen, Leo P. Kouwenhoven, Erik P.A.M. Bakkers

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Abstract

In this work we report on recent advances in the fabrication and characterization of crossed InSb nanowires. The yield of crystalline nanowire crosses has been increased by growing the wires on 111 facets created in 100-oriented InP substrates by wet chemical etching. Ebeam lithography on the tilted facets has been developed to precisely control the position of the catalysts particles, crucial for an optimized crossing process. With transmission electron microscopy we investigate the crystalline quality of the wire-wire interface. Low-temperature transport studies show quantized conductance across the junction indicating the high quality of the merged nanowires.

Original languageEnglish
Title of host publication2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages2
ISBN (Electronic)978-150901964-9
DOIs
Publication statusPublished - 1 Aug 2016
Event2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
Duration: 26 Jun 201630 Jun 2016

Conference

Conference2016 Compound Semiconductor Week, CSW 2016
CountryJapan
CityToyama
Period26/06/1630/06/16

Keywords

  • crystal growth
  • InSb
  • Nanowire
  • transport

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    Car, D., Gazibegovic, S., Balk, S., Boj, S. C., Fadaly, E., Zhang, H., Veld, R. O. H., Verheijen, M. A., Kouwenhoven, L. P., & Bakkers, E. P. A. M. (2016). Crossed InSb nanowire junctions for Majorana operations. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 [7528546] Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICIPRM.2016.7528546