Crossed InSb nanowire junctions for Majorana operations

Diana Car; Sasa Gazibegovic; Stijn Balk; Sonia Conesa Boj; Elham Fadaly; H. Zhang; Roy Op Het Veld; Marcel A. Verheijen; Leo P. Kouwenhoven; Erik P.A.M. Bakkers

doi:10.1109/ICIPRM.2016.7528546

Crossed InSb nanowire junctions for Majorana operations

Diana Car, Sasa Gazibegovic, Stijn Balk, Sonia Conesa Boj, Elham Fadaly, H. Zhang, Roy Op Het Veld, Marcel A. Verheijen, Leo P. Kouwenhoven, Erik P.A.M. Bakkers

QRD/Kouwenhoven Lab

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

In this work we report on recent advances in the fabrication and characterization of crossed InSb nanowires. The yield of crystalline nanowire crosses has been increased by growing the wires on 111 facets created in 100-oriented InP substrates by wet chemical etching. Ebeam lithography on the tilted facets has been developed to precisely control the position of the catalysts particles, crucial for an optimized crossing process. With transmission electron microscopy we investigate the crystalline quality of the wire-wire interface. Low-temperature transport studies show quantized conductance across the junction indicating the high quality of the merged nanowires.

Original language	English
Title of host publication	2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	2
ISBN (Electronic)	978-150901964-9
DOIs	https://doi.org/10.1109/ICIPRM.2016.7528546
Publication status	Published - 1 Aug 2016
Event	2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan Duration: 26 Jun 2016 → 30 Jun 2016

Conference

Conference	2016 Compound Semiconductor Week, CSW 2016
Country/Territory	Japan
City	Toyama
Period	26/06/16 → 30/06/16

Keywords

crystal growth
InSb
Nanowire
transport

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10.1109/ICIPRM.2016.7528546

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Car, D., Gazibegovic, S., Balk, S., Boj, S. C., Fadaly, E., Zhang, H., Veld, R. O. H., Verheijen, M. A., Kouwenhoven, L. P., & Bakkers, E. P. A. M. (2016). Crossed InSb nanowire junctions for Majorana operations. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 Article 7528546 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICIPRM.2016.7528546

Car, Diana ; Gazibegovic, Sasa ; Balk, Stijn et al. / Crossed InSb nanowire junctions for Majorana operations. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers (IEEE), 2016.

@inproceedings{bd57bc722d9f486e99aa9c9e433eba63,

title = "Crossed InSb nanowire junctions for Majorana operations",

abstract = "In this work we report on recent advances in the fabrication and characterization of crossed InSb nanowires. The yield of crystalline nanowire crosses has been increased by growing the wires on 111 facets created in 100-oriented InP substrates by wet chemical etching. Ebeam lithography on the tilted facets has been developed to precisely control the position of the catalysts particles, crucial for an optimized crossing process. With transmission electron microscopy we investigate the crystalline quality of the wire-wire interface. Low-temperature transport studies show quantized conductance across the junction indicating the high quality of the merged nanowires.",

keywords = "crystal growth, InSb, Nanowire, transport",

author = "Diana Car and Sasa Gazibegovic and Stijn Balk and Boj, {Sonia Conesa} and Elham Fadaly and H. Zhang and Veld, {Roy Op Het} and Verheijen, {Marcel A.} and Kouwenhoven, {Leo P.} and Bakkers, {Erik P.A.M.}",

year = "2016",

month = aug,

day = "1",

doi = "10.1109/ICIPRM.2016.7528546",

language = "English",

booktitle = "2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2016 Compound Semiconductor Week, CSW 2016 ; Conference date: 26-06-2016 Through 30-06-2016",

}

Car, D, Gazibegovic, S, Balk, S, Boj, SC, Fadaly, E, Zhang, H, Veld, ROH, Verheijen, MA, Kouwenhoven, LP & Bakkers, EPAM 2016, Crossed InSb nanowire junctions for Majorana operations. in 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016., 7528546, Institute of Electrical and Electronics Engineers (IEEE), 2016 Compound Semiconductor Week, CSW 2016, Toyama, Japan, 26/06/16. https://doi.org/10.1109/ICIPRM.2016.7528546

Crossed InSb nanowire junctions for Majorana operations. / Car, Diana; Gazibegovic, Sasa; Balk, Stijn et al.
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers (IEEE), 2016. 7528546.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Crossed InSb nanowire junctions for Majorana operations

AU - Car, Diana

AU - Gazibegovic, Sasa

AU - Balk, Stijn

AU - Boj, Sonia Conesa

AU - Fadaly, Elham

AU - Zhang, H.

AU - Veld, Roy Op Het

AU - Verheijen, Marcel A.

AU - Kouwenhoven, Leo P.

AU - Bakkers, Erik P.A.M.

PY - 2016/8/1

Y1 - 2016/8/1

N2 - In this work we report on recent advances in the fabrication and characterization of crossed InSb nanowires. The yield of crystalline nanowire crosses has been increased by growing the wires on 111 facets created in 100-oriented InP substrates by wet chemical etching. Ebeam lithography on the tilted facets has been developed to precisely control the position of the catalysts particles, crucial for an optimized crossing process. With transmission electron microscopy we investigate the crystalline quality of the wire-wire interface. Low-temperature transport studies show quantized conductance across the junction indicating the high quality of the merged nanowires.

AB - In this work we report on recent advances in the fabrication and characterization of crossed InSb nanowires. The yield of crystalline nanowire crosses has been increased by growing the wires on 111 facets created in 100-oriented InP substrates by wet chemical etching. Ebeam lithography on the tilted facets has been developed to precisely control the position of the catalysts particles, crucial for an optimized crossing process. With transmission electron microscopy we investigate the crystalline quality of the wire-wire interface. Low-temperature transport studies show quantized conductance across the junction indicating the high quality of the merged nanowires.

KW - crystal growth

KW - InSb

KW - Nanowire

KW - transport

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U2 - 10.1109/ICIPRM.2016.7528546

DO - 10.1109/ICIPRM.2016.7528546

M3 - Conference contribution

AN - SCOPUS:84992052280

BT - 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 2016 Compound Semiconductor Week, CSW 2016

Y2 - 26 June 2016 through 30 June 2016

ER -

Car D, Gazibegovic S, Balk S, Boj SC, Fadaly E, Zhang H et al. Crossed InSb nanowire junctions for Majorana operations. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers (IEEE). 2016. 7528546 doi: 10.1109/ICIPRM.2016.7528546

Crossed InSb nanowire junctions for Majorana operations

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