Crystalline silicon solar cells with thin poly-SiOx carrier-selective passivating contacts for perovskite/c-Si tandem applications

Manvika Singh*, Aswathy Amarnath, Fabian Wagner, Yifeng Zhao, Guangtao Yang, Luana Mazzarella, Arthur W. Weeber, Miro Zeman, Olindo Isabella, More Authors

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Single junction crystalline silicon (c-Si) solar cells are reaching their practical efficiency limit whereas perovskite/c-Si tandem solar cells have achieved efficiencies above the theoretical limit of single junction c-Si solar cells. Next to low-thermal budget silicon heterojunction architecture, high-thermal budget carrier-selective passivating contacts (CSPCs) based on polycrystalline-SiOx (poly-SiOx) also constitute a promising architecture for high efficiency perovskite/c-Si tandem solar cells. In this work, we present the development of c-Si bottom cells based on high temperature poly-SiOx CSPCs and demonstrate novel high efficiency four-terminal (4T) and two-terminal (2T) perovskite/c-Si tandem solar cells. First, we tuned the ultra-thin, thermally grown SiOx. Then we optimized the passivation properties of p-type and n-type doped poly-SiOx CSPCs. Here, we have optimized the p-type doped poly-SiOx CSPC on textured interfaces via a two-step annealing process. Finally, we integrated such bottom solar cells in both 4T and 2T tandems, achieving 28.1% and 23.2% conversion efficiency, respectively.

Original languageEnglish
Pages (from-to)877-887
Number of pages11
JournalProgress in Photovoltaics: research and applications
Volume31
Issue number9
DOIs
Publication statusPublished - 2023

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