Effect of temperature on lanthanide charge transition levels and vacuum referred binding energies

Location of lanthanide levels in the bandgap, vacuum referred binding energy (VRBE) in the lanthanide ground state and energy of lanthanide charge transition levels (CTLs) are just three different namings for the same concept. A concept of importance for the performance of lanthanide activated compounds. Energy differences of CTLs with the conduction band bottom and valence band top are important when it concerns e.g. lanthanide luminescence, charge carrier trapping, and valence stability. Effect of temperature on CTL energy or VRBE has so far never been addressed despite that luminescence application and thermoluminescence studies may span a temperature range from 10 K to 1000 K. In this work information on the bandgap (or energy of host exciton creation) around 10 K and at RT in compounds is gathered to demonstrate that bandgap decreases by 0.1 eV to 0.3 eV when temperature increases to RT. A similar decrease will be demonstrated for the energy of electron transfer from the VB to a trivalent lanthanide. The findings have consequences for VRBE-diagram construction, i.e. the experimental parameters for such construction should all apply to the same temperature. They also have consequences on how to relate luminescence thermal quenching energy barriers and TL derived electron and hole trap depths with a VRBE diagram. By proper evaluating the effects of temperature, accuracy of VRBE diagrams and consistency with luminescence and thermoluminescence data can be improved.