Effects of boron addition on the high temperature oxidation of MoSi2 alloys

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Boron containing MoSi2 is a promising material for applications at high temperature, but the oxidation mechanism is still unclear. In this work, the high temperature (1100 °C) oxidation of B doped MoSi2 in synthetic air has been investigated. A (boro)silicate layer is formed on the surface of the alloy, which features a mixture of amorphous SiO2 and cristobalite. After an initial transient period, the oxidation kinetics follows a parabolic growth rate law. The growth rate constant of the oxide layer is enhanced by the boron in the alloy by 90 % per at.% B. The increase in growth rate is associated with boron mitigating the formation of cristobalite thereby promoting the formation of amorphous SiO2.

Original languageEnglish
Article number115580
Number of pages6
JournalScripta Materialia
Publication statusPublished - 2023


  • Boron
  • Kinetics
  • MoSi
  • Oxidation

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