Electrical and physical properties of polysilicon film resistors modified by excimer laser annealing

FM Soares; MR van den Berg; LK Nanver; CCG Visser; K Grimm; JW Slotboom

Electrical and physical properties of polysilicon film resistors modified by excimer laser annealing

FM Soares, MR van den Berg, LK Nanver, CCG Visser, K Grimm, JW Slotboom

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

Original language	Undefined/Unknown
Title of host publication	3rd International Conference on Materials for Microelectronics: proceedings
Place of Publication	London
Publisher	IOM communications
Pages	235-238
Number of pages	4
ISBN (Print)	1-86125-129-7
Publication status	Published - 2000
Event	3rd International Conference on Materials for Microelectronics, Dublin Castle - London Duration: 16 Oct 2000 → 17 Oct 2000

Publication series

Name
Publisher	IOM Communications

Conference

Conference	3rd International Conference on Materials for Microelectronics, Dublin Castle
Period	16/10/00 → 17/10/00

Keywords

ZX Int.klas.verslagjaar < 2002

Cite this

@inproceedings{50ad7f0de55e4aef8531b2d3e2a1ed34,

title = "Electrical and physical properties of polysilicon film resistors modified by excimer laser annealing",

keywords = "ZX Int.klas.verslagjaar < 2002",

author = "FM Soares and {van den Berg}, MR and LK Nanver and CCG Visser and K Grimm and JW Slotboom",

year = "2000",

language = "Undefined/Unknown",

isbn = "1-86125-129-7",

publisher = "IOM communications",

pages = "235--238",

booktitle = "3rd International Conference on Materials for Microelectronics: proceedings",

address = "United Kingdom",

note = "3rd International Conference on Materials for Microelectronics, Dublin Castle ; Conference date: 16-10-2000 Through 17-10-2000",

}

Soares, FM, van den Berg, MR, Nanver, LK, Visser, CCG, Grimm, K & Slotboom, JW 2000, Electrical and physical properties of polysilicon film resistors modified by excimer laser annealing. in 3rd International Conference on Materials for Microelectronics: proceedings. IOM communications, London, pp. 235-238, 3rd International Conference on Materials for Microelectronics, Dublin Castle, 16/10/00.

Electrical and physical properties of polysilicon film resistors modified by excimer laser annealing. / Soares, FM; van den Berg, MR; Nanver, LK et al.
3rd International Conference on Materials for Microelectronics: proceedings. London: IOM communications, 2000. p. 235-238.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

TY - GEN

T1 - Electrical and physical properties of polysilicon film resistors modified by excimer laser annealing

AU - Soares, FM

AU - van den Berg, MR

AU - Nanver, LK

AU - Visser, CCG

AU - Grimm, K

AU - Slotboom, JW

PY - 2000

Y1 - 2000

KW - ZX Int.klas.verslagjaar < 2002

M3 - Conference contribution

SN - 1-86125-129-7

SP - 235

EP - 238

BT - 3rd International Conference on Materials for Microelectronics: proceedings

PB - IOM communications

CY - London

T2 - 3rd International Conference on Materials for Microelectronics, Dublin Castle

Y2 - 16 October 2000 through 17 October 2000

ER -