Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application

L Shi; S Nihtianov; F Scholze; LK Nanver

doi:10.1109/IECON.2012.6389260

Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application

L Shi, S Nihtianov, F Scholze, LK Nanver

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

5 Citations (Scopus)

Original language	English
Title of host publication	Proceedings 38th Annual Conference on IEEE Industrial Electronics Society
Editors	L Gomes, LG Chakraborty, D Irwin
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE
Pages	3952-3957
Number of pages	6
ISBN (Print)	978-1-4673-2419-9
DOIs	https://doi.org/10.1109/IECON.2012.6389260
Publication status	Published - 2012
Event	IEEE IECON 2012, Montreal, Canada - Piscataway, NJ, USA Duration: 25 Oct 2012 → 28 Oct 2012

Publication series

Name
Publisher	IEEE

Conference

Conference	IEEE IECON 2012, Montreal, Canada
Period	25/10/12 → 28/10/12

Keywords

Conf.proc. > 3 pag

Access to Document

10.1109/IECON.2012.6389260

Cite this

Shi, L., Nihtianov, S., Scholze, F., & Nanver, LK. (2012). Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application. In L. Gomes, LG. Chakraborty, & D. Irwin (Eds.), Proceedings 38th Annual Conference on IEEE Industrial Electronics Society (pp. 3952-3957). IEEE. https://doi.org/10.1109/IECON.2012.6389260

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title = "Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application",

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author = "L Shi and S Nihtianov and F Scholze and LK Nanver",

year = "2012",

doi = "10.1109/IECON.2012.6389260",

language = "English",

isbn = "978-1-4673-2419-9",

publisher = "IEEE",

pages = "3952--3957",

editor = "L Gomes and LG Chakraborty and D Irwin",

booktitle = "Proceedings 38th Annual Conference on IEEE Industrial Electronics Society",

address = "United States",

note = "IEEE IECON 2012, Montreal, Canada ; Conference date: 25-10-2012 Through 28-10-2012",

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Shi, L, Nihtianov, S, Scholze, F & Nanver, LK 2012, Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application. in L Gomes, LG Chakraborty & D Irwin (eds), Proceedings 38th Annual Conference on IEEE Industrial Electronics Society. IEEE, Piscataway, NJ, USA, pp. 3952-3957, IEEE IECON 2012, Montreal, Canada, 25/10/12. https://doi.org/10.1109/IECON.2012.6389260

Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application. / Shi, L; Nihtianov, S; Scholze, F et al.
Proceedings 38th Annual Conference on IEEE Industrial Electronics Society. ed. / L Gomes; LG Chakraborty; D Irwin. Piscataway, NJ, USA: IEEE, 2012. p. 3952-3957.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application

AU - Shi, L

AU - Nihtianov, S

AU - Scholze, F

AU - Nanver, LK

PY - 2012

Y1 - 2012

KW - Conf.proc. > 3 pag

U2 - 10.1109/IECON.2012.6389260

DO - 10.1109/IECON.2012.6389260

M3 - Conference contribution

SN - 978-1-4673-2419-9

SP - 3952

EP - 3957

BT - Proceedings 38th Annual Conference on IEEE Industrial Electronics Society

A2 - Gomes, L

A2 - Chakraborty, LG

A2 - Irwin, D

PB - IEEE

CY - Piscataway, NJ, USA

T2 - IEEE IECON 2012, Montreal, Canada

Y2 - 25 October 2012 through 28 October 2012

ER -

Shi L, Nihtianov S, Scholze F, Nanver LK. Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application. In Gomes L, Chakraborty LG, Irwin D, editors, Proceedings 38th Annual Conference on IEEE Industrial Electronics Society. Piscataway, NJ, USA: IEEE. 2012. p. 3952-3957 doi: 10.1109/IECON.2012.6389260