TY - JOUR
T1 - Enhancement of proximity-induced superconductivity in a planar Ge hole gas
AU - Aggarwal, Kushagra
AU - Hofmann, Andrea
AU - Jirovec, Daniel
AU - Prieto, Ivan
AU - Sammak, Amir
AU - Botifoll, Marc
AU - Martí-Sánchez, Sara
AU - Veldhorst, Menno
AU - Scappucci, Giordano
AU - More Authors, null
PY - 2021
Y1 - 2021
N2 - Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large ICRN products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip.
AB - Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large ICRN products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip.
UR - http://www.scopus.com/inward/record.url?scp=85106404782&partnerID=8YFLogxK
U2 - 10.1103/PhysRevResearch.3.L022005
DO - 10.1103/PhysRevResearch.3.L022005
M3 - Article
AN - SCOPUS:85106404782
SN - 2643-1564
VL - 3
JO - Physical Review Research
JF - Physical Review Research
IS - 2
M1 - L022005
ER -