Enhancement of proximity-induced superconductivity in a planar Ge hole gas

Kushagra Aggarwal, Andrea Hofmann, Daniel Jirovec, Ivan Prieto, Amir Sammak, Marc Botifoll, Sara Martí-Sánchez, Menno Veldhorst, Giordano Scappucci, More Authors

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)
11 Downloads (Pure)

Abstract

Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large ICRN products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip.

Original languageEnglish
Article numberL022005
Number of pages7
JournalPhysical Review Research
Volume3
Issue number2
DOIs
Publication statusPublished - 2021

Fingerprint

Dive into the research topics of 'Enhancement of proximity-induced superconductivity in a planar Ge hole gas'. Together they form a unique fingerprint.

Cite this