Gate Driver Design for 1.2 kV SiC Module with PCB Integrated Rogowski Coil Protection Circuit

Marco Stecca; Panagiotis  Tiftikidis; Thiago Batista Soeiro; Pavol Bauer

doi:10.1109/ECCE47101.2021.9595589

Gate Driver Design for 1.2 kV SiC Module with PCB Integrated Rogowski Coil Protection Circuit

Marco Stecca, Panagiotis Tiftikidis, Thiago Batista Soeiro, Pavol Bauer

DC systems, Energy conversion & Storage

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

6 Citations (Scopus)

281 Downloads (Pure)

Abstract

Wide band-gap materials, e.g., Silicon Carbide (SiC), allow the realization of power semiconductor with superior performance with respect to the traditional Si-based counterparts. On the other hand they require more stringent short-circuit or over-current clearing time to safeguard the device lifetime. This paper focuses on the analysis, design guidelines and practical implementation of a gate drive circuit incorporating fast short-circuit/over-current protection $(\lt 1 \mu \mathrm{s})$ based on the device di/dt measurement through PCB-based auxiliary Rogowski coils. The target power module is a industry standard 62mm packaged 1.2kV SiC MOSFET half-bridge. The gate driver protection features are experimentally tested and the target time for the short circuit clearing was satisfied, with the gate driver effectively turning off the switches within 400 ns during a short-circuit test.

Original language	English
Title of host publication	2021 IEEE Energy Conversion Congress and Exposition (ECCE)
Subtitle of host publication	Proceedings
Place of Publication	Danvers
Publisher	IEEE
Pages	5723-5728
Number of pages	6
ISBN (Electronic)	978-1-7281-5135-9
ISBN (Print)	978-1-7281-6128-0
DOIs	https://doi.org/10.1109/ECCE47101.2021.9595589
Publication status	Published - 2021
Event	2021 IEEE Energy Conversion Congress and Exposition (ECCE) - Virtual at Vancouver, Canada Duration: 10 Oct 2021 → 14 Oct 2021

Publication series

Name	2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings

Conference

Conference	2021 IEEE Energy Conversion Congress and Exposition (ECCE)
Abbreviated title	ECCE 2021
Country/Territory	Canada
City	Virtual at Vancouver
Period	10/10/21 → 14/10/21

Bibliographical note

Accepted author manuscript

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ECCE47101.2021.9595589

ECCE_2021Accepted author manuscript, 4.71 MB

Cite this

Stecca, M., Tiftikidis, P., Soeiro, T. B., & Bauer, P. (2021). Gate Driver Design for 1.2 kV SiC Module with PCB Integrated Rogowski Coil Protection Circuit. In 2021 IEEE Energy Conversion Congress and Exposition (ECCE): Proceedings (pp. 5723-5728). Article 9594898 (2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings). IEEE. https://doi.org/10.1109/ECCE47101.2021.9595589

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title = "Gate Driver Design for 1.2 kV SiC Module with PCB Integrated Rogowski Coil Protection Circuit",

abstract = "Wide band-gap materials, e.g., Silicon Carbide (SiC), allow the realization of power semiconductor with superior performance with respect to the traditional Si-based counterparts. On the other hand they require more stringent short-circuit or over-current clearing time to safeguard the device lifetime. This paper focuses on the analysis, design guidelines and practical implementation of a gate drive circuit incorporating fast short-circuit/over-current protection $(\lt 1 \mu \mathrm{s})$ based on the device di/dt measurement through PCB-based auxiliary Rogowski coils. The target power module is a industry standard 62mm packaged 1.2kV SiC MOSFET half-bridge. The gate driver protection features are experimentally tested and the target time for the short circuit clearing was satisfied, with the gate driver effectively turning off the switches within 400 ns during a short-circuit test.",

author = "Marco Stecca and Panagiotis Tiftikidis and Soeiro, {Thiago Batista} and Pavol Bauer",

note = "Accepted author manuscript; 2021 IEEE Energy Conversion Congress and Exposition (ECCE), ECCE 2021 ; Conference date: 10-10-2021 Through 14-10-2021",

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doi = "10.1109/ECCE47101.2021.9595589",

language = "English",

isbn = "978-1-7281-6128-0",

series = "2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings",

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}

Stecca, M, Tiftikidis, P, Soeiro, TB & Bauer, P 2021, Gate Driver Design for 1.2 kV SiC Module with PCB Integrated Rogowski Coil Protection Circuit. in 2021 IEEE Energy Conversion Congress and Exposition (ECCE): Proceedings., 9594898, 2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings, IEEE, Danvers, pp. 5723-5728, 2021 IEEE Energy Conversion Congress and Exposition (ECCE), Virtual at Vancouver, Canada, 10/10/21. https://doi.org/10.1109/ECCE47101.2021.9595589

Gate Driver Design for 1.2 kV SiC Module with PCB Integrated Rogowski Coil Protection Circuit. / Stecca, Marco; Tiftikidis, Panagiotis ; Soeiro, Thiago Batista et al.
2021 IEEE Energy Conversion Congress and Exposition (ECCE): Proceedings. Danvers: IEEE, 2021. p. 5723-5728 9594898 (2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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T1 - Gate Driver Design for 1.2 kV SiC Module with PCB Integrated Rogowski Coil Protection Circuit

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AU - Tiftikidis, Panagiotis

AU - Soeiro, Thiago Batista

AU - Bauer, Pavol

N1 - Accepted author manuscript

PY - 2021

Y1 - 2021

N2 - Wide band-gap materials, e.g., Silicon Carbide (SiC), allow the realization of power semiconductor with superior performance with respect to the traditional Si-based counterparts. On the other hand they require more stringent short-circuit or over-current clearing time to safeguard the device lifetime. This paper focuses on the analysis, design guidelines and practical implementation of a gate drive circuit incorporating fast short-circuit/over-current protection $(\lt 1 \mu \mathrm{s})$ based on the device di/dt measurement through PCB-based auxiliary Rogowski coils. The target power module is a industry standard 62mm packaged 1.2kV SiC MOSFET half-bridge. The gate driver protection features are experimentally tested and the target time for the short circuit clearing was satisfied, with the gate driver effectively turning off the switches within 400 ns during a short-circuit test.

AB - Wide band-gap materials, e.g., Silicon Carbide (SiC), allow the realization of power semiconductor with superior performance with respect to the traditional Si-based counterparts. On the other hand they require more stringent short-circuit or over-current clearing time to safeguard the device lifetime. This paper focuses on the analysis, design guidelines and practical implementation of a gate drive circuit incorporating fast short-circuit/over-current protection $(\lt 1 \mu \mathrm{s})$ based on the device di/dt measurement through PCB-based auxiliary Rogowski coils. The target power module is a industry standard 62mm packaged 1.2kV SiC MOSFET half-bridge. The gate driver protection features are experimentally tested and the target time for the short circuit clearing was satisfied, with the gate driver effectively turning off the switches within 400 ns during a short-circuit test.

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Stecca M, Tiftikidis P, Soeiro TB, Bauer P. Gate Driver Design for 1.2 kV SiC Module with PCB Integrated Rogowski Coil Protection Circuit. In 2021 IEEE Energy Conversion Congress and Exposition (ECCE): Proceedings. Danvers: IEEE. 2021. p. 5723-5728. 9594898. (2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings). doi: 10.1109/ECCE47101.2021.9595589

Gate Driver Design for 1.2 kV SiC Module with PCB Integrated Rogowski Coil Protection Circuit

Abstract

Publication series

Conference

Bibliographical note

UN SDGs

Access to Document

Other files and links

Fingerprint

PROGRESSUS: Highly efficient and trustworthy electronics, components and systems for the next generation energy supply infrastructure

Cite this

Gate Driver Design for 1.2 kV SiC Module with PCB Integrated Rogowski Coil Protection Circuit

Abstract

Publication series

Conference

Bibliographical note

UN SDGs

Access to Document

Other files and links

Fingerprint

Projects

PROGRESSUS: Highly efficient and trustworthy electronics, components and systems for the next generation energy supply infrastructure

Cite this