Gate Driver Design for 1.2 kV SiC Module with PCB Integrated Rogowski Coil Protection Circuit

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

17 Downloads (Pure)

Abstract

Wide band-gap materials, e.g., Silicon Carbide (SiC), allow the realization of power semiconductor with superior performance with respect to the traditional Si-based counterparts. On the other hand they require more stringent short-circuit or over-current clearing time to safeguard the device lifetime. This paper focuses on the analysis, design guidelines and practical implementation of a gate drive circuit incorporating fast short-circuit/over-current protection $(\lt 1 \mu \mathrm{s})$ based on the device di/dt measurement through PCB-based auxiliary Rogowski coils. The target power module is a industry standard 62mm packaged 1.2kV SiC MOSFET half-bridge. The gate driver protection features are experimentally tested and the target time for the short circuit clearing was satisfied, with the gate driver effectively turning off the switches within 400 ns during a short-circuit test.
Original languageEnglish
Title of host publication2021 IEEE Energy Conversion Congress and Exposition (ECCE)
Subtitle of host publicationProceedings
Place of PublicationDanvers
PublisherIEEE
Pages5723-5728
Number of pages6
ISBN (Electronic)978-1-7281-5135-9
ISBN (Print)978-1-7281-6128-0
DOIs
Publication statusPublished - 2021
Event2021 IEEE Energy Conversion Congress and Exposition (ECCE) - Virtual at Vancouver, Canada
Duration: 10 Oct 202114 Oct 2021

Conference

Conference2021 IEEE Energy Conversion Congress and Exposition (ECCE)
Abbreviated titleECCE 2021
Country/TerritoryCanada
CityVirtual at Vancouver
Period10/10/2114/10/21

Bibliographical note

Accepted author manuscript

Fingerprint

Dive into the research topics of 'Gate Driver Design for 1.2 kV SiC Module with PCB Integrated Rogowski Coil Protection Circuit'. Together they form a unique fingerprint.

Cite this