High resolution reactive ion etching of GaN and etch-induced effects.

R Cheung, RJ Reeves, B Rong, SA Brown, EJM Fakkeldij, EWJM van der Drift, M Kamp

Research output: Contribution to journalArticleScientificpeer-review

21 Citations (Scopus)
Original languageUndefined/Unknown
Pages (from-to)2759-2763
Number of pages5
JournalJournal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures
Issue numberissue 6
Publication statusPublished - 1999

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