Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection

Jian Zhang; Robert Sokolovskij; Ganhui Chen; Yumeng Zhu; Yongle Qi; Xinpeng Lin; Wenmao Li; Guo Qi Zhang; Yu-Long Jiang; Hongyu Yu

doi:10.1016/j.snb.2018.10.052

Impact of high temperature H₂ pre-treatment on Pt-AlGaN/GaN HEMT sensor for H₂S detection

Jian Zhang, Robert Sokolovskij, Ganhui Chen, Yumeng Zhu, Yongle Qi, Xinpeng Lin, Wenmao Li, Guo Qi Zhang, Yu-Long Jiang, Hongyu Yu

Research output: Contribution to journal › Article › Scientific › peer-review

23 Citations (Scopus)

86 Downloads (Pure)

Abstract

In this paper, a method to extend the detection range of hydrogen sulfide (H₂S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H₂S exposure in dry air. A pre-treatment using H₂ pulses in dry air ambient at 250 °C was applied to extend the detection range of the sensor. The H₂ treated H₂S gas sensor was able to detect a higher H₂S concentration up to 90 ppm at 250 °C without complete saturation.

Original language	English
Pages (from-to)	138-143
Number of pages	6
Journal	Sensors and Actuators, B: Chemical
Volume	280
DOIs	https://doi.org/10.1016/j.snb.2018.10.052
Publication status	Published - 2019

Bibliographical note

Accepted author manuscript

Keywords

AlGaN/GaN
Gas sensor
H2S
HEMT
Pt

Access to Document

10.1016/j.snb.2018.10.052

47248585 - zhang2019Accepted author manuscript, 767 KBLicence: CC BY-NC-ND

Cite this

@article{f8a038132579455d87f07b4ae73ed7fe,

title = "Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection",

abstract = "In this paper, a method to extend the detection range of hydrogen sulfide (H2S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H2S exposure in dry air. A pre-treatment using H2 pulses in dry air ambient at 250 °C was applied to extend the detection range of the sensor. The H2 treated H2S gas sensor was able to detect a higher H2S concentration up to 90 ppm at 250 °C without complete saturation.",

keywords = "AlGaN/GaN, Gas sensor, H2S, HEMT, Pt",

author = "Jian Zhang and Robert Sokolovskij and Ganhui Chen and Yumeng Zhu and Yongle Qi and Xinpeng Lin and Wenmao Li and Zhang, {Guo Qi} and Yu-Long Jiang and Hongyu Yu",

note = "Accepted author manuscript",

year = "2019",

doi = "10.1016/j.snb.2018.10.052",

language = "English",

volume = "280",

pages = "138--143",

journal = "Sensors and Actuators, B: Chemical",

issn = "0925-4005",

publisher = "Elsevier",

}

TY - JOUR

T1 - Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection

AU - Zhang, Jian

AU - Sokolovskij, Robert

AU - Chen, Ganhui

AU - Zhu, Yumeng

AU - Qi, Yongle

AU - Lin, Xinpeng

AU - Li, Wenmao

AU - Zhang, Guo Qi

AU - Jiang, Yu-Long

AU - Yu, Hongyu

N1 - Accepted author manuscript

PY - 2019

Y1 - 2019

N2 - In this paper, a method to extend the detection range of hydrogen sulfide (H2S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H2S exposure in dry air. A pre-treatment using H2 pulses in dry air ambient at 250 °C was applied to extend the detection range of the sensor. The H2 treated H2S gas sensor was able to detect a higher H2S concentration up to 90 ppm at 250 °C without complete saturation.

AB - In this paper, a method to extend the detection range of hydrogen sulfide (H2S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H2S exposure in dry air. A pre-treatment using H2 pulses in dry air ambient at 250 °C was applied to extend the detection range of the sensor. The H2 treated H2S gas sensor was able to detect a higher H2S concentration up to 90 ppm at 250 °C without complete saturation.

KW - AlGaN/GaN

KW - Gas sensor

KW - H2S

KW - HEMT

KW - Pt

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U2 - 10.1016/j.snb.2018.10.052

DO - 10.1016/j.snb.2018.10.052

M3 - Article

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SN - 0925-4005

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JF - Sensors and Actuators, B: Chemical

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