Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection

Jian Zhang, Robert Sokolovskij, Ganhui Chen, Yumeng Zhu, Yongle Qi, Xinpeng Lin, Wenmao Li, Guo Qi Zhang, Yu-Long Jiang, Hongyu Yu

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)


In this paper, a method to extend the detection range of hydrogen sulfide (H2S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H2S exposure in dry air. A pre-treatment using H2 pulses in dry air ambient at 250 °C was applied to extend the detection range of the sensor. The H2 treated H2S gas sensor was able to detect a higher H2S concentration up to 90 ppm at 250 °C without complete saturation.

Original languageEnglish
Pages (from-to)138-143
Number of pages6
JournalSensors and Actuators, B: Chemical
Publication statusPublished - 2019


  • AlGaN/GaN
  • Gas sensor
  • H2S
  • HEMT
  • Pt

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