Influence of deposition parameters and temperature on stress and strain of In Situ doped PECVD silicon carbide

TMH Pham; CR de Boer; L Pakula; PM Sarro

Influence of deposition parameters and temperature on stress and strain of In Situ doped PECVD silicon carbide

TMH Pham, CR de Boer, L Pakula, PM Sarro

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

7 Citations (Scopus)

Original language	Undefined/Unknown
Title of host publication	ICSCRM2001 Proceedings of the International Conference on Silicon Carbide and Related Materials
Editors	S Yoshida
Place of Publication	Zurich, Switzerland
Publisher	Trans Tech Publications
Pages	759-762
Number of pages	4
ISBN (Print)	0-87849-894-X
Publication status	Published - 2002
Event	ICSCRM2001, Tsukuba, Japan - Zurich, Switzerland Duration: 28 Oct 2001 → 2 Nov 2001

Publication series

Name
Publisher	Trans Tech Publications

Name
Volume	1

Conference

Conference	ICSCRM2001, Tsukuba, Japan
Period	28/10/01 → 2/11/01

Keywords

Elektrotechniek
Techniek
Conf.proc. > 3 pag

Cite this

@inproceedings{49fc6f9839a142999836bb2c6137ad2f,

title = "Influence of deposition parameters and temperature on stress and strain of In Situ doped PECVD silicon carbide",

keywords = "Elektrotechniek, Techniek, Conf.proc. > 3 pag",

author = "TMH Pham and {de Boer}, CR and L Pakula and PM Sarro",

year = "2002",

language = "Undefined/Unknown",

isbn = "0-87849-894-X",

publisher = "Trans Tech Publications",

pages = "759--762",

editor = "S Yoshida",

booktitle = "ICSCRM2001 Proceedings of the International Conference on Silicon Carbide and Related Materials",

address = "Germany",

note = "ICSCRM2001, Tsukuba, Japan ; Conference date: 28-10-2001 Through 02-11-2001",

}

Pham, TMH, de Boer, CR , Pakula, L & Sarro, PM 2002, Influence of deposition parameters and temperature on stress and strain of In Situ doped PECVD silicon carbide. in S Yoshida (ed.), ICSCRM2001 Proceedings of the International Conference on Silicon Carbide and Related Materials. Trans Tech Publications, Zurich, Switzerland, pp. 759-762, ICSCRM2001, Tsukuba, Japan, 28/10/01.

Influence of deposition parameters and temperature on stress and strain of In Situ doped PECVD silicon carbide. / Pham, TMH; de Boer, CR ; Pakula, L et al.
ICSCRM2001 Proceedings of the International Conference on Silicon Carbide and Related Materials. ed. / S Yoshida. Zurich, Switzerland: Trans Tech Publications, 2002. p. 759-762.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Influence of deposition parameters and temperature on stress and strain of In Situ doped PECVD silicon carbide

AU - Pham, TMH

AU - de Boer, CR

AU - Pakula, L

AU - Sarro, PM

PY - 2002

Y1 - 2002

KW - Elektrotechniek

KW - Techniek

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SN - 0-87849-894-X

SP - 759

EP - 762

BT - ICSCRM2001 Proceedings of the International Conference on Silicon Carbide and Related Materials

A2 - Yoshida, S

PB - Trans Tech Publications

CY - Zurich, Switzerland

T2 - ICSCRM2001, Tsukuba, Japan

Y2 - 28 October 2001 through 2 November 2001

ER -