Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

AF Stassen, RWI de Boer, NN Iosad, AF Morpurgo

Research output: Contribution to journal › Article › Scientific › peer-review

Keywords

@article{aae8941d43814e12adec2177b2e18080,

title = "Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors",

keywords = "academic journal papers, ZX CWTS 1.00 <= JFIS < 3.00",

author = "AF Stassen and {de Boer}, RWI and NN Iosad and AF Morpurgo",

year = "2004",

language = "Undefined/Unknown",

volume = "85",

pages = "3899--3901",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

AU - Stassen, AF

AU - de Boer, RWI

AU - Iosad, NN

AU - Morpurgo, AF

PY - 2004

Y1 - 2004

KW - academic journal papers

KW - ZX CWTS 1.00 <= JFIS < 3.00

M3 - Article

SN - 0003-6951

VL - 85

SP - 3899

EP - 3901

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -