Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

AF Stassen, RWI de Boer, NN Iosad, AF Morpurgo

    Research output: Contribution to journalArticleScientificpeer-review

    265 Citations (Scopus)
    Original languageUndefined/Unknown
    Pages (from-to)3899-3901
    Number of pages3
    JournalApplied Physics Letters
    Volume85
    Issue number17
    Publication statusPublished - 2004

    Keywords

    • academic journal papers
    • ZX CWTS 1.00 <= JFIS < 3.00

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